Flash Memory. S34MS08G2 Datasheet

S34MS08G2 Memory. Datasheet pdf. Equivalent

S34MS08G2 Datasheet
Recommendation S34MS08G2 Datasheet
Part S34MS08G2
Description NAND Flash Memory
Feature S34MS08G2; S34MS08G2 8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC NAND Flash Memory for Embedded Distinctive Characte.
Manufacture Cypress Semiconductor
Datasheet
Download S34MS08G2 Datasheet




Cypress Semiconductor S34MS08G2
S34MS08G2
8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC
NAND Flash Memory for Embedded
Distinctive Characteristics
Density
– 8 Gb (4 Gb x 2)
Architecture (For each 4 Gb device)
– Input / Output Bus Width: 8-bits
– Page Size: (2048 + 128) bytes; 128-byte spare area
– Block Size: 64 Pages or (128k + 8k) bytes
– Plane Size
– 2048 Blocks per Plane or (256M + 16M) bytes
– Device Size
– 2 Planes per Device or 512 Mbyte
NAND Flash Interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data and Commands multiplexed
Supply Voltage
– 1.8V device: VCC = 1.7V ~ 1.95V
Security
– One Time Programmable (OTP) area
– Serial number (unique ID)
– Hardware program/erase disabled during power transition
Additional Features
– Supports Multiplane Program and Erase commands
– Supports Copy Back Program
– Supports Multiplane Copy Back Program
– Supports Read Cache
Electronic Signature
– Manufacturer ID: 01h
Operating Temperature
– Industrial: –40 °C to 85 °C
– Industrial Plus: –40 °C to 105 °C
Performance
Page Read / Program
– Random access: 30 µs (Max)
– Sequential access: 45 ns (Min)
– Program time / Multiplane Program time: 300 µs (Typ)
Block Erase / Multiplane Erase
– Block Erase time: 3.5 ms (Typ)
Reliability
– 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes)
– 10 Year Data retention (Typ)
– Blocks zero and one are valid and will be valid for at least
1000
program-erase cycles with ECC
Package Options
– Lead Free and Low Halogen
– 63-Ball BGA 9 x 11 x 1 mm
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-00515 Rev. *E
• San Jose, CA 95134-1709 • 408-943-2600
Revised October 27, 2016



Cypress Semiconductor S34MS08G2
S34MS08G2
Contents
1. General Description..................................................... 3
2. Connection Diagram.................................................... 3
3. Pin Description............................................................. 4
4. Block Diagrams............................................................ 5
5. Addressing ................................................................... 6
6. Read Status Enhanced ................................................ 7
7. Read ID.......................................................................... 7
7.1 Read Parameter Page ................................................... 9
8. Electrical Characteristics .......................................... 12
8.1 Valid Blocks ................................................................. 12
8.2 DC Characteristics ....................................................... 12
8.3 Pin Capacitance........................................................... 13
8.4 Power Consumptions and Pin Capacitance
for Allowed Stacking Configurations ............................. 13
9. Physical Interface ....................................................... 14
9.1 Physical Diagram .......................................................... 14
10. Ordering Information .................................................. 15
11. Revision History.......................................................... 16
Document History Page ......................................................16
Sales, Solutions, and Legal Information ...........................17
Worldwide Sales and Design Support ............................17
Products .........................................................................17
PSoC® Solutions .......................................................... 17
Cypress Developer Community ..................................... 17
Technical Support ......................................................... 17
Document Number: 002-00515 Rev. *E
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Cypress Semiconductor S34MS08G2
S34MS08G2
1. General Description
The Cypress® S34MS08G2 8-Gb NAND is offered in 1.8VCC with x8 I/O interface. This document contains information for the
S34MS08G2 device, which is a dual-die stack of two S34MS04G2 die. For detailed specifications, please refer to the discrete die
data sheet: S34MS01G2_04G2.
2. Connection Diagram
Figure 2.1 63-BGA Contact, x8 Device, Single CE (Top View)
A1 A2
NC NC
A9 A10
NC NC
B1 B9 B10
NC NC NC
C3 C4 C5 C6 C7 C8
WP#
ALE
VSS
CE#
WE#
RB#
D3 D4 D5 D6 D7 D8
VCC
RE#
CLE
NC
NC
NC
E3 E4 E5 E6 E7 E8
NC NC NC NC NC NC
F3 F4 F5 F6 F7 F8
NC NC NC NC VSS NC
G3 G4 G5 G6 G7 G8
NC VCC NC NC NC NC
H3 H4 H5 H6 H7 H8
NC I/O0 NC NC NC Vcc
J3 J4 J5 J6 J7 J8
NC
I/O1
NC
VCC
I/O5
I/O7
K3 K4 K5 K6 K7 K8
VSS I/O2 I/O3 I/O4 I/O6 VSS
L1 L2
NC NC
L9 L10
NC NC
M1 M2
NC NC
M9 M10
NC NC
Note:
1. These pins should be connected to power supply or ground (as designated) following the ONFI specification, however they might not be bonded internally.
Document Number: 002-00515 Rev. *E
Page 3 of 17







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