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CY7C4142KV13

Cypress Semiconductor

144-Mbit QDR-IV XP SRAM

CY7C4122KV13/CY7C4142KV13 144-Mbit QDR™-IV XP SRAM 144-Mbit QDR™-IV XP SRAM Features Configurations ■ 144-Mbit densit...


Cypress Semiconductor

CY7C4142KV13

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Description
CY7C4122KV13/CY7C4142KV13 144-Mbit QDR™-IV XP SRAM 144-Mbit QDR™-IV XP SRAM Features Configurations ■ 144-Mbit density (8M × 18, 4M × 36) ■ Total Random Transaction Rate[1] of 2132 MT/s ■ Maximum operating frequency of 1066 MHz ■ Read latency of 8.0 clock cycles and write latency of 5.0 clock cycles ■ Eight-bank architecture enables one access per bank per cycle ■ Two-word burst on all accesses ■ Dual independent bidirectional data ports ❐ Double data rate (DDR) data ports ❐ Supports concurrent read/write transactions on both ports ■ Single address port used to control both data ports ❐ DDR address signaling ■ Single data rate (SDR) control signaling ■ High-speed transceiver logic (HSTL) and stub series terminated logic (SSTL) compatible signaling (JESD8-16A compliant) ❐ I/O VDDQ = 1.2 V ± 50 mV or 1.25 V ± 50 mV ■ Pseudo open drain (POD) signaling (JESD8-24 compliant) ❐ I/O VDDQ = 1.1 V ± 50 mV or 1.2 V ± 50 mV ■ Core voltage ❐ VDD = 1....




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