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CY7C1564XV18

Cypress Semiconductor

72-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture

CY7C1562XV18/CY7C1564XV18 72-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR...


Cypress Semiconductor

CY7C1564XV18

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CY7C1562XV18/CY7C1564XV18 72-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 450 MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz ■ Available in 2.5 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Single multiplexed address input bus latches address inputs for both read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ QDR™-II+ Xtreme operates with 2.5 cycle read latency when ...




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