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CY7C2265XV18

Cypress Semiconductor

36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture

CY7C2263XV18 CY7C2265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 3...


Cypress Semiconductor

CY7C2265XV18

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CY7C2263XV18 CY7C2265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 633 MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1266 MHz) at 633 MHz ■ Available in 2.5 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ On-Die Termination (ODT) feature ❐ Supported for D[x:0], BWS[x:0], and K/K inputs ■ Single multiplexed address input bus latches address inputs for read and write ports ■ Separate port selects for depth expansion ■ ...




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