18-Mbit DDR II+ SRAM Two-Word Burst Architecture
CY7C2168KV18/CY7C2170KV18
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
18-Mbit DD...
Description
CY7C2168KV18/CY7C2170KV18
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
■ 18-Mbit density (1M × 18, 512K × 36) ■ 550-MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at
1100 MHz) at 550 MHz ■ Available in 2.5 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ On-die termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs ■ Synchronous internally self-timed writes ■ DDR II+ operates with 2.5 cycle read latency when DOFF is
asserted HIGH ■ Operates similar to DDR I device with one cycle read latency
when DOFF is asserted LOW ■ Core VDD = 1.8 V ...
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