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CY7C1525KV18 Dataheets PDF



Part Number CY7C1525KV18
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description 72-Mbit QDR II SRAM Two-Word Burst Architecture
Datasheet CY7C1525KV18 DatasheetCY7C1525KV18 Datasheet (PDF)

CY7C1525KV18 CY7C1512KV18 CY7C1514KV18 72-Mbit QDR® II SRAM Two-Word Burst Architecture 72-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 350 MHz clock for high bandwidth ■ Two-word burst on all accesses ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 700 MHz) at 350 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input c.

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CY7C1525KV18 CY7C1512KV18 CY7C1514KV18 72-Mbit QDR® II SRAM Two-Word Burst Architecture 72-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 350 MHz clock for high bandwidth ■ Two-word burst on all accesses ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 700 MHz) at 350 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Single multiplexed address input bus latches address inputs for both read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to QDR I device with 1 cycle read latency whe.


CY7C1414KV18 CY7C1525KV18 CY7C1512KV18


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