144-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1613KV18/CY7C1615KV18
144-Mbit QDR® II SRAM Four-Word Burst Architecture
144-Mbit QDR® II SRAM Four-Word Burst Arch...
Description
CY7C1613KV18/CY7C1615KV18
144-Mbit QDR® II SRAM Four-Word Burst Architecture
144-Mbit QDR® II SRAM Four-Word Burst Architecture
Features
■ Separate independent read and write data ports ❐ Supports concurrent transactions
■ 333 MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems ■ Single multiplexed address input bus latches address inputs
for read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ Quad data rate (QDR®) II operates with 1.5-cycle read latency
when DOFF is asserted high ■ Operates similar to a QDR I device with...
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