CY7C2663KV18

CY7C2663KV18/CY7C2665KV18 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 550-MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.5-clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ Static random access memory (SRAM) uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ On-die termination (ODT) feature ❐ Supported for D[x:0], BWS[x:0], and K/K inputs ■ Single multiplexed address input bus latches address inputs for read and write ports ■ Separate port selects for d...