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Static RAM. CY62126ESL Datasheet

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Static RAM. CY62126ESL Datasheet






CY62126ESL RAM. Datasheet pdf. Equivalent




CY62126ESL RAM. Datasheet pdf. Equivalent





Part

CY62126ESL

Description

1-Mbit (64 K x 16) Static RAM

Manufacture

Cypress Semiconductor

Datasheet
Download CY62126ESL Datasheet


Cypress Semiconductor CY62126ESL

CY62126ESL; CY62126ESL MoBL® 1-Mbit (64 K × 16) St atic RAM 1-Mbit (64 K × 16) Static RA M Features ■ Very high speed: 45 ns Wide voltage range: 2.2 V to 3.6 V a nd 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 4 A ■ Ultra low active power ❐ Typical active current: 1.3 mA at f = 1 MHz Easy memory expansion with CE, and OE f.


Cypress Semiconductor CY62126ESL

eatures ■ Automatic power down when de selected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 44-p in thin small outline package (TSOP) Ty pe II package Functional Description Th e CY62126ESL is a high performance CMOS static RAM organized as 64K words by 1 6 bits. This device features advanced c ircuit design to provide.


Cypress Semiconductor CY62126ESL

ultra low active current. This is ideal for providing More Battery Life™ (Mo BL) in portable applications. The de vice also has an automatic power down f eature that significantly reduces power consumption when addresses are not .



Part

CY62126ESL

Description

1-Mbit (64 K x 16) Static RAM

Manufacture

Cypress Semiconductor

Datasheet
Download CY62126ESL Datasheet




 CY62126ESL
CY62126ESL MoBL®
1-Mbit (64 K × 16) Static RAM
1-Mbit (64 K × 16) Static RAM
Features
Very high speed: 45 ns
Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
Ultra low standby power
Typical standby current: 1 A
Maximum standby current: 4 A
Ultra low active power
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Available in Pb-free 44-pin thin small outline package (TSOP)
Type II package
Functional Description
The CY62126ESL is a high performance CMOS static RAM
organized as 64K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL) in portable
applications. The device also has an automatic power down
feature that significantly reduces power consumption when
addresses are not toggling. Placing the device into standby
mode reduces power consumption by more than 99 percent
when deselected (CE HIGH). The input and output pins (I/O0
through I/O15) are placed in a high impedance state when the
device is deselected (CE HIGH), the outputs are disabled (OE
HIGH), both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH) or during a write operation (CE LOW and WE
LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O0 through I/O7) is written into the location
specified on the address pins (A0 through A15). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O8 through
I/O15) is written into the location specified on the address pins
(A0 through A15).
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on I/O0 to I/O7. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O8 to I/O15. See the Truth Table on page 11 for a
complete description of read and write modes.
The CY62126ESL device is suitable for interfacing with
processors that have TTL I/P levels. It is not suitable for
processors that require CMOS I/P levels. Please see Electrical
Characteristics on page 4 for more details and suggested
alternatives.
For a complete list of related resources, click here.
Logic Block Diagram
DATA IN DRIVERS
A10
A9
A8
A7
AA65
A4
64 K × 16
RAM Array
A3
A2
A1
A0
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-45076 Rev. *J
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 4, 2018





 CY62126ESL
CY62126ESL MoBL®
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagram ............................................................ 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 16
Worldwide Sales and Design Support ....................... 16
Products .................................................................... 16
PSoC® Solutions ...................................................... 16
Cypress Developer Community ................................. 16
Technical Support ..................................................... 16
Document Number: 001-45076 Rev. *J
Page 2 of 16





 CY62126ESL
CY62126ESL MoBL®
Pin Configuration
44-pin TSOP II pinout (Top View) [1]
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A5
43 A6
42 A7
41 OE
40 BHE
39 BLE
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 VSS
33 VCC
32
31
II//OO1110
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
Product Portfolio
Product
Range
VCC Range (V) [2]
Speed
(ns)
CY62126ESL Industrial 2.2 V–3.6 V and 4.5 V–5.5 V 45
Power Dissipation
Operating ICC, (mA)
f = 1MHz
Typ [3] Max
f = fmax
Typ [3] Max
Standby, ISB2 (A)
Typ [3] Max
1.3 2 11 16 1
4
Notes
1. NC pins are not connected on the die.
2. Datasheet specifications are not guaranteed for VCC in the range of 3.6 V to 4.5 V.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
Document Number: 001-45076 Rev. *J
Page 3 of 16



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