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Static RAM. CY62156ESL Datasheet

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Static RAM. CY62156ESL Datasheet







CY62156ESL RAM. Datasheet pdf. Equivalent




CY62156ESL RAM. Datasheet pdf. Equivalent





Part

CY62156ESL

Description

8-Mbit (512 K x 16) Static RAM

Manufacture

Cypress Semiconductor

Datasheet
Download CY62156ESL Datasheet


Cypress Semiconductor CY62156ESL

CY62156ESL; CY62156ESL MoBL® 8-Mbit (512 K × 16) S tatic RAM 8-Mbit (512 K × 16) Static RAM Features ■ High Speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra Low Standby Po wer ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A Ultra Low Active Power ❐ Typical ac tive current: 1.8 mA at f = 1 MHz ■ E asy Memory Expansion with CE1, CE2, and O.


Cypress Semiconductor CY62156ESL

E Features ■ Automatic Power Down when Deselected ■ CMOS for Optimum Speed and Power ■ Available in Pb-free 48-b all very fine-pitch ball grid array (VF BGA) packages Functional Description Th e CY62156ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low act ive current. This is ide.


Cypress Semiconductor CY62156ESL

al for providing More Battery Life (M oBL®) in portable applications such a s cellular telephones. The device also has an automatic power down feature tha t significantly reduces power consumpti on when addresses are not toggling. .



Part

CY62156ESL

Description

8-Mbit (512 K x 16) Static RAM

Manufacture

Cypress Semiconductor

Datasheet
Download CY62156ESL Datasheet




 CY62156ESL
CY62156ESL MoBL®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
High Speed: 45 ns
Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
Ultra Low Standby Power
Typical standby current: 2 A
Maximum standby current: 8 A
Ultra Low Active Power
Typical active current: 1.8 mA at f = 1 MHz
Easy Memory Expansion with CE1, CE2, and OE Features
Automatic Power Down when Deselected
CMOS for Optimum Speed and Power
Available in Pb-free 48-ball very fine-pitch ball grid array
(VFBGA) packages
Functional Description
The CY62156ESL is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life(MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Place the device
in standby mode when deselected (CE1 HIGH or CE2 LOW). The
input or output pins (I/O0 through I/O15) are placed in a high
impedance state when the device is deselected (CE1 HIGH or
CE2 LOW), the outputs are disabled (OE HIGH), Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or
a write operation is active (CE1 LOW, CE2 HIGH and WE LOW).
To write to the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is
written into the location specified on the address pins (A0 through
A18). If Byte High Enable (BHE) is LOW, then data from I/O pins
(I/O8 through I/O15) is written into the location specified on the
address pins (A0 through A18).
To read from the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appear
on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O8 to I/O15. See the Truth Table on page
11 for a complete description of read and write modes.
For a complete list of related documentation, click here.
Logic Block Diagram
A10
A9
A8
A7
AA65
A4
A3
A2
A1
A0
DATA IN DRIVERS
512 K × 16
RAM Array
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-54995 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 28, 2014





 CY62156ESL
CY62156ESL MoBL®
Contents
Pin Configurations ........................................................... 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagrams .......................................................... 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 16
Worldwide Sales and Design Support ....................... 16
Products .................................................................... 16
PSoC® Solutions ...................................................... 16
Cypress Developer Community ................................. 16
Technical Support ..................................................... 16
Document Number: 001-54995 Rev. *F
Page 2 of 16





 CY62156ESL
CY62156ESL MoBL®
Pin Configurations
Figure 1. 48-ball VFBGA pinout (Top View) [1]
12 345 6
BLE OE A0 A1 A2 CE2 A
I/O8 BHE A3
I/O9 I/O10 A5
A4 CE1 I/O0
A6 I/O1 I/O2
B
C
VSS I/O11 A17 A7 I/O3 VCC
VCC I/O12 NC A16 I/O4 VSS
I/O14 I/O13 A14 A15 I/O5 I/O6
D
E
F
I/O15 NC A12 A13 WE I/O7 G
A18 A8 A9 A10 A11 NC
H
Product Portfolio
Product
Range
VCC Range (V) [2]
CY62156ESL Industrial 2.2 V to 3.6 V and 4.5 V to 5.5 V
Speed
(ns)
45
Power Dissipation
Operating ICC, (mA)
f = 1MHz
Typ [3] Max
f = fmax
Typ [3] Max
Standby,
(A)
ISB2
Typ [3] Max
1.8 3 18 25 2
8
Notes
1. NC pins are not connected on the die.
2. Datasheet specifications are not guaranteed for VCC in the range of 3.6 V to 4.5 V.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
Document Number: 001-54995 Rev. *F
Page 3 of 16



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