CY7S1061G/CY7S1061GE
16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC
16-Mbit (1 M words × 16 bit) Sta...
CY7S1061G/CY7S1061GE
16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC
16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC)
Features
■ High speed ❐ tAA = 10 ns
■ Ultra-low power PowerSnooze™[1] device ❐ Deep Sleep (DS) current IDS = 22-µA maximum
■ Low active and standby currents ❐ ICC = 90-mA typical ❐ ISB2 = 20-mA typical
■ Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
■ Embedded error-correcting code (ECC) for single-bit error correction
■ 1.0-V data retention
■
Transistor-
transistor logic (TTL) compatible inputs and outputs
■ Error indication (ERR) pin to indicate 1-bit error detection and correction
■ Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages
Functional Description
The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits. This device features fast access times (10 ns) and...