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F-RAM Memory. FM16W08 Datasheet

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F-RAM Memory. FM16W08 Datasheet







FM16W08 Memory. Datasheet pdf. Equivalent




FM16W08 Memory. Datasheet pdf. Equivalent





Part

FM16W08

Description

64-Kbit (8 K x 8) Wide Voltage Bytewide F-RAM Memory

Manufacture

Cypress Semiconductor

Datasheet
Download FM16W08 Datasheet


Cypress Semiconductor FM16W08

FM16W08; FM16W08 64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory 64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory F eatures ■ 64-Kbit ferroelectric rando m access memory (F-RAM) logically organ ized as 8 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-ye ar data retention (see the Data Retenti on and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliabil.


Cypress Semiconductor FM16W08

ity ferroelectric process ■ SRAM and E EPROM compatible ❐ Industry-standard 8 K × 8 SRAM and EEPROM pinout ❐ 70- ns access time, 130-ns cycle time ■ S uperior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solu tion, no rework steps ❐ Superior for moisture, shock, and vibration ❐ Resi stant to negative voltage undershoots.


Cypress Semiconductor FM16W08

■ Low power consumption ❐ Active cu rrent 12 mA (max) ❐ Standby current 2 0 A (typ) ■ Wide voltage operation : VDD = 2.7 V to 5.5 V ■ Industrial temperature: –40 C to +85 C ■ 28-pin small outline integrat .



Part

FM16W08

Description

64-Kbit (8 K x 8) Wide Voltage Bytewide F-RAM Memory

Manufacture

Cypress Semiconductor

Datasheet
Download FM16W08 Datasheet




 FM16W08
FM16W08
64-Kbit (8 K × 8) Wide Voltage Bytewide
F-RAM Memory
64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory
Features
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8 K × 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 8 K × 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 A (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 C to +85 C
28-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Functional Overview
The FM16W08 is a 8 K × 8 nonvolatile memory that reads and
writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
The FM16W08 operation is similar to that of other RAM devices
and therefore, it can be used as a drop-in replacement for a
standard SRAM in a system. Minimum read and write cycle times
are equal. The F-RAM memory is nonvolatile due to its unique
ferroelectric memory process. These features make the
FM16W08 ideal for nonvolatile memory applications requiring
frequent or rapid writes.
The device is available in a 28-pin SOIC surface mount package.
Device specifications are guaranteed over the industrial
temperature range –40 °C to +85 °C.
For a complete list of related documentation, click here.
Logic Block Diagram
A12-0
A12-0
8Kx8
F-RAM Array
CE
Control
WE Logic
OE
I/O Latch & Bus Driver
DQ 7-0
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-86210 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 8, 2015





 FM16W08
FM16W08
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Device Operation .............................................................. 4
Memory Architecture ................................................... 4
Memory Operation ....................................................... 4
Read Operation ........................................................... 4
Write Operation ........................................................... 4
Pre-charge Operation .................................................. 4
Endurance ......................................................................... 4
F-RAM Design Considerations ........................................ 5
Maximum Ratings ............................................................. 7
Operating Range ............................................................... 7
DC Electrical Characteristics .......................................... 7
Data Retention and Endurance ....................................... 7
Capacitance ...................................................................... 8
Thermal Resistance .......................................................... 8
AC Test Conditions .......................................................... 8
AC Switching Characteristics ......................................... 9
SRAM Read Cycle ...................................................... 9
SRAM Write Cycle ..................................................... 10
Power Cycle Timing ....................................................... 12
Functional Truth Table ................................................... 13
Ordering Information ...................................................... 14
Ordering Code Definitions ......................................... 14
Package Diagram ............................................................ 15
Acronyms ........................................................................ 16
Document Conventions ................................................. 16
Units of Measure ....................................................... 16
Document History Page ................................................. 17
Sales, Solutions, and Legal Information ...................... 18
Worldwide Sales and Design Support ....................... 18
Products .................................................................... 18
PSoC® Solutions ...................................................... 18
Cypress Developer Community ................................. 18
Technical Support ..................................................... 18
Document Number: 001-86210 Rev. *F
Page 2 of 18





 FM16W08
FM16W08
Pinout
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
Figure 1. 28-pin SOIC pinout
1 28
2 27
3 26
4 25
5 24
6 28-pin SOIC 23
7
(x 8)
22
8
Top view
21
9 (not to scale) 20
10 19
11 18
12 17
13 16
14 15
VDD
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Pin Definitions
Pin Name I/O Type
Description
A12–A0
DQ7–DQ0
WE
Input Address inputs: The 13 address lines select one of 8,192 bytes in the F-RAM array.
Input/Output Data I/O Lines: 8-bit bidirectional data bus for accessing the F-RAM array.
Input
Write Enable: A write cycle begins when WE is asserted. Asserting WE LOW causes the FM16W08 to
write the contents of the data bus to the address location latched by the falling edge of CE.
CE Input Chip Enable: The device is selected when CE is LOW. Asserting CE LOW causes the address to be
latched internally. Address changes that occur after CE goes LOW will be ignored until the next falling
edge occurs.
OE Input Output Enable: When OE is LOW, the FM16W08 drives the data bus when the valid read data is
available. Deasserting OE HIGH tristates the DQ pins.
VSS Ground Ground for the device. Must be connected to the ground of the system.
VDD Power supply Power supply input to the device.
NC No connect No connect. This pin is not connected to the die.
Document Number: 001-86210 Rev. *F
Page 3 of 18



Recommended third-party FM16W08 Datasheet






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