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I2C F-RAM. CY15B256J Datasheet

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I2C F-RAM. CY15B256J Datasheet






CY15B256J F-RAM. Datasheet pdf. Equivalent




CY15B256J F-RAM. Datasheet pdf. Equivalent





Part

CY15B256J

Description

256-Kbit (32K x 8) Automotive Serial (I2C) F-RAM



Feature


CY15B256J 256-Kbit (32K × 8) Automotive Serial (I2C) F-RAM 256-Kbit (32K × 8 ) Automotive Serial (I2C) F-RAM Feature s ■ 256-Kbit ferroelectric random acc ess memory (F-RAM) logically organized as 32K × 8 ❐ High-endurance 100 tril lion (1014) read/writes ❐ 151-year da ta retention (See the Data Retention an d Endurance table) ❐ NoDelay™ write s ❐ Advanced high-reliability f.
Manufacture

Cypress Semiconductor

Datasheet
Download CY15B256J Datasheet


Cypress Semiconductor CY15B256J

CY15B256J; erroelectric process ■ Fast two-wire s erial interface (I2C) ❐ Up to 3.4-MHz frequency[1] ❐ Direct hardware repla cement for serial EEPROM ❐ Supports l egacy timings for 100 kHz and 400 kHz Device ID ❐ Manufacturer ID and Pr oduct ID ■ Low power consumption ❐ 175-A active current at 100 kHz ❐ 150-A standby current ❐ 8-A sle ep mode current ■ Low-voltage operation: VDD.


Cypress Semiconductor CY15B256J

= 2.0 V to 3.6 V ■ Automotive-A tempe rature: –40 C to +85 C ■ 8-pi n small outline integrated circuit (SOI C) package ■ Restriction of hazardous substances (RoHS) compliant Logic Bloc k Diagram Functional .


Cypress Semiconductor CY15B256J

.

Part

CY15B256J

Description

256-Kbit (32K x 8) Automotive Serial (I2C) F-RAM



Feature


CY15B256J 256-Kbit (32K × 8) Automotive Serial (I2C) F-RAM 256-Kbit (32K × 8 ) Automotive Serial (I2C) F-RAM Feature s ■ 256-Kbit ferroelectric random acc ess memory (F-RAM) logically organized as 32K × 8 ❐ High-endurance 100 tril lion (1014) read/writes ❐ 151-year da ta retention (See the Data Retention an d Endurance table) ❐ NoDelay™ write s ❐ Advanced high-reliability f.
Manufacture

Cypress Semiconductor

Datasheet
Download CY15B256J Datasheet




 CY15B256J
CY15B256J
256-Kbit (32K × 8) Automotive-E Serial
(I2C) F-RAM
256-Kbit (32K × 8) Automotive-E Serial (I2C) F-RAM
Features
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
High-endurance 10 trillion (1013) read/writes
121-year data retention (See Data Retention and Endurance
on page 12)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
500-A active current at 100 kHz
500-A standby current
12-A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Automotive-E temperature: –40 C to +125 C
8-pin small outline integrated circuit (SOIC) package
AEC Q100 Grade 1 compliant
Restriction of hazardous substances (RoHS) compliant
Functional Description
The CY15B256J is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 121 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike EEPROM, the CY15B256J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
CY15B256J is capable of supporting 1013 read/write cycles, or
10 million times more write cycles than EEPROM.
These capabilities make the CY15B256J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The combi-
nation of features allows more frequent data writing with less
overhead for the system.
The CY15B256J provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device incor-
porates a read-only Device ID that allows the host to determine
the manufacturer, product density, and product revision. The
device specifications are guaranteed over an Automotive-E
temperature range of –40 C to +125 C.
Logic Block Diagram
Counter
Address
Latch
15
32 K x 8
F-RAM Array
8
SDA
SCL
WP
A0-A2
Serial to Parallel
Converter
Control Logic
Data Latch
8
8
Device ID and
Manufacturer ID
Note
1.
The CY15B256J does
Refer to DC Electrical
not meet the NXP
Characteristics on
I2C specification in the Fast-mode
page 11 for more details.
Plus
(Fm+,
1
MHz)
for
IOL
and
in
the
High
Speed
Mode
(Hs-mode,
3.4
MHz)
for
Vhys.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-10968 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 26, 2018




 CY15B256J
CY15B256J
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
Two-wire Interface ............................................................ 4
STOP Condition (P) ..................................................... 4
START Condition (S) ................................................... 4
Data/Address Transfer ................................................ 5
Acknowledge/No-acknowledge ................................... 5
High Speed Mode (Hs-Mode) ...................................... 6
Slave Device Address ................................................. 6
Addressing Overview .................................................. 6
Data Transfer .............................................................. 6
Memory Operation ............................................................ 7
Write Operation ........................................................... 7
Read Operation ........................................................... 8
Sleep Mode ................................................................. 9
Device ID ......................................................................... 10
Maximum Ratings ........................................................... 11
Operating Range ............................................................. 11
DC Electrical Characteristics ........................................ 11
Data Retention and Endurance ..................................... 12
Example of an F-RAM Life Time
in an AEC-Q100 Automotive Application ..................... 12
Capacitance .................................................................... 12
Thermal Resistance ........................................................ 12
AC Test Loads and Waveforms ..................................... 13
AC Test Conditions ........................................................ 13
AC Switching Characteristics ....................................... 14
Power Cycle Timing ....................................................... 15
Ordering Information ...................................................... 16
Ordering Code Definitions ......................................... 16
Package Diagram ............................................................ 17
Acronyms ........................................................................ 18
Document Conventions ................................................. 18
Units of Measure ....................................................... 18
Document History Page ................................................. 19
Sales, Solutions, and Legal Information ...................... 20
Worldwide Sales and Design Support ....................... 20
Products .................................................................... 20
PSoC® Solutions ...................................................... 20
Cypress Developer Community ................................. 20
Technical Support ..................................................... 20
Document Number: 002-10968 Rev. *C
Page 2 of 20




 CY15B256J
CY15B256J
Pinout
Figure 1. 8-pin SOIC Pinout
A0 1
8
A1 2 Top View 7
not to scale
A2 3
6
VSS 4
5
VDD
WP
SCL
SDA
Pin Definitions
Pin Name
A0–A2
SDA
SCL
WP
VSS
VDD
I/O Type
Description
Input
Device Select Address 0–2. These pins are used to select one of up to eight devices of the same
type on the same two-wire bus. To select the device, the address value on the three pins must match
the corresponding bits contained in the slave address. The address pins are pulled down internally.
Input/Output
Serial Data Address. This is a bidirectional pin for the two-wire interface. It is open-drain and is
intended to be wire-AND'd with other devices on the two-wire bus. The input buffer incorporates a
Schmitt trigger for noise immunity and the output driver includes slope control for falling edges. An
external pull-up resistor is required.
Input
Serial Clock. The serial clock pin for the two-wire interface. Data is clocked out of the part on the falling
edge, and into the device on the rising edge. The SCL input also incorporates a Schmitt trigger input
for noise immunity.
Input
Write Protect. When tied to VDD, addresses in the entire memory map will be write-protected. When
WP is connected to ground, all addresses are write enabled. This pin is pulled down internally.
Power supply Ground for the device. Must be connected to the ground of the system.
Power supply Power supply input to the device.
Document Number: 002-10968 Rev. *C
Page 3 of 20






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