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MOSFET H-BRIDGE. ZXMHN6A07T8 Datasheet

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MOSFET H-BRIDGE. ZXMHN6A07T8 Datasheet






ZXMHN6A07T8 H-BRIDGE. Datasheet pdf. Equivalent




ZXMHN6A07T8 H-BRIDGE. Datasheet pdf. Equivalent





Part

ZXMHN6A07T8

Description

60V N-CHANNEL MOSFET H-BRIDGE



Feature


A Product Line of Diodes Incorporated G reen ZXMHN6A07T8 60V N-CHANNELZMXOMSF HETNH6-BARI0DGE Product Summary BVDSS 60V RDS(ON) (Ω) 0.3 @ VGS = 10V Des cription and Applications ID (A) 1.6 Features Compact Package Low On State Losses Low Drive Requirements Operat es up to 60V 1 Amp Continuous Rating 7T8 ZXMHN6A0 7T8ZXMHN6 A07T8 This new generation of trenc.
Manufacture

Diodes

Datasheet
Download ZXMHN6A07T8 Datasheet


Diodes ZXMHN6A07T8

ZXMHN6A07T8; h MOSFETs from Zetex utilizes a unique s tructure that combines the benefits of low on-resistance with fast switching s peed. This makes them ideal for high ef ficiency, low voltage, power management applications. Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and A ntimony Free. “Green” Device (Note 3) Mechanical Data DC-AC Converters Motor Control Case: .


Diodes ZXMHN6A07T8

SM-8 (8 LEAD SOT223) Case Material: Mol ded Plastic, “Green” Molding Compou nd. UL Flammability Classification Rati ng 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Mat te Tin Plated Leads. .


Diodes ZXMHN6A07T8

.

Part

ZXMHN6A07T8

Description

60V N-CHANNEL MOSFET H-BRIDGE



Feature


A Product Line of Diodes Incorporated G reen ZXMHN6A07T8 60V N-CHANNELZMXOMSF HETNH6-BARI0DGE Product Summary BVDSS 60V RDS(ON) (Ω) 0.3 @ VGS = 10V Des cription and Applications ID (A) 1.6 Features Compact Package Low On State Losses Low Drive Requirements Operat es up to 60V 1 Amp Continuous Rating 7T8 ZXMHN6A0 7T8ZXMHN6 A07T8 This new generation of trenc.
Manufacture

Diodes

Datasheet
Download ZXMHN6A07T8 Datasheet




 ZXMHN6A07T8
A Product Line of
Diodes Incorporated
Green
ZXMHN6A07T8
60V N-CHANNELZMXOMSFHETNH6-BARI0DGE
Product Summary
BVDSS
60V
RDS(ON) (Ω)
0.3 @ VGS = 10V
Description and Applications
ID (A)
1.6
Features
Compact Package
Low On State Losses
Low Drive Requirements
Operates up to 60V
1 Amp Continuous Rating
7T8
ZXMHN6A0
7T8ZXMHN6
A07T8
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
DC-AC Converters
Motor Control
Case: SM-8 (8 LEAD SOT223)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.117 grams (Approximate)
SM-8
Top View
Top View
Pin Out
Equivalent Circuit
Ordering Information (Note 4)
Part Number
ZXMHN6A07T8TA
ZXMHN6A07T8TC
Reel Size (inches)
7
13
Tape Width (mm)
12
12
Quantity per Reel
1,000
4,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMH
N6A07
ZXMHN6A07 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01 to 53)
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
1 of 8
www.diodes.com
March 2015
© Diodes Incorporated




 ZXMHN6A07T8
Absolute Maximum Ratings
Characteristic
Drain-Source Voltage
Gate-Source Voltage
TA = +25°C (Notes 6, 8)
Continuous Drain Current VGS = 10V TA = +70°C (Notes 6, 8)
TA = +25°C (Notes 5, 8)
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Notes 6, 8)
Pulsed Source Current (Body Diode) (Note 7)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
A Product Line of
Diodes Incorporated
ZXMHN6A07T8
ZXMHN6A0
7T8
Value
60
ZXMHNUVn6it A0
20 7T8ZXMVHN6
1.6
1.3 A07TA8
1.4
9A
1A
9A
Thermal Characteristics
Characteristic
Total Power Dissipation
at TA = +25°C
Any Single transistor " on" (Notes 5, 8)
Single transistor „on‟ (Notes 6, 8)
Two transistors „on‟ equally (Notes 5, 9)
Linear Derating Factor
above +25°C
Single transistor " on" (Notes 5, 8)
Single transistor „on‟ (Notes 6, 8)
Two transistors „on‟ equally (Notes 5, 9)
Thermal Resistance -
Junction to Ambient
Single transistor " on" (Notes 5, 8)
Single transistor " on" (Notes 6, 8)
Two transistors „on‟ equally (Notes 5, 9)
Operating and Storage Temperature Range
Symbol
PTOT
PTOT
RθJA
TJ,TSTG
Value
1.1
1.4
1.6
8.8
11.2
13.2
114
89
76
-55 to +150
Unit
W
mW/C
C/W
C
Notes: 5. For a device mounted on 50mm x 50mm x 1.6mm FR-4 PCB with a high coverage of single sided 2oz weight copper in still air
conditions with the heat sink split into three equal areas, one for each drain connection.
6. For a device surface mounted on a FR-4 PCB at t < = 10 sec.
7. Repetitive rating on 50mm x 50mm x 1.6mm FR-4 PCB, duty cycle 2%, pulse width 300µs in still air conditions with the heat sink split
into three equal areas, one for each drain connection.
8. For device with one active die.
9. For any two die not sharing the same drain connection.
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
2 of 8
www.diodes.com
March 2015
© Diodes Incorporated




 ZXMHN6A07T8
A Product Line of
Diodes Incorporated
ZXMHN6A07T8
ZXMHN6A0
7T8
ZXMHN6A0
7T8ZXMHN6
A07T8
ZXMHN6A07T8
Document number: DS33511 Rev. 4 - 2
3 of 8
www.diodes.com
March 2015
© Diodes Incorporated



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