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MODE MOSFET. DMS3016SSS Datasheet

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MODE MOSFET. DMS3016SSS Datasheet






DMS3016SSS MOSFET. Datasheet pdf. Equivalent




DMS3016SSS MOSFET. Datasheet pdf. Equivalent





Part

DMS3016SSS

Description

N-CHANNEL ENHANCEMENT MODE MOSFET



Feature


NEW PRODUCT DMS3016SSS N-CHANNEL ENHANC EMENT MODE MOSFET WITH SCHOTTKY DIODE Features • DIOFET utilizes a unique p atented process to monolithically integ rate a MOSFET and a Schottky in a singl e die to deliver: • Low RDS(ON) - min imizes conduction losses • Low VSD - reducing the losses due to body diode c onduction • Low Qrr - lower Qrr of th e integrated Schottky redu.
Manufacture

Diodes

Datasheet
Download DMS3016SSS Datasheet


Diodes DMS3016SSS

DMS3016SSS; ces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – red uces risk of shootthrough or cross cond uction currents at high frequencies • Avalanche rugged – IAR and EAR rated • Lead Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualif ied to AEC-Q101 Standards for High Reli ability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, .


Diodes DMS3016SSS

“Green” Molding Compound. UL Flammab ility Classification Rating 94V-0 • M oisture Sensitivity: Level 1 per J-STD- 020 • Terminal Connections: See Diagr am Below • Marking Information: See P age 5 • Ordering Information: See Pa .


Diodes DMS3016SSS

.

Part

DMS3016SSS

Description

N-CHANNEL ENHANCEMENT MODE MOSFET



Feature


NEW PRODUCT DMS3016SSS N-CHANNEL ENHANC EMENT MODE MOSFET WITH SCHOTTKY DIODE Features • DIOFET utilizes a unique p atented process to monolithically integ rate a MOSFET and a Schottky in a singl e die to deliver: • Low RDS(ON) - min imizes conduction losses • Low VSD - reducing the losses due to body diode c onduction • Low Qrr - lower Qrr of th e integrated Schottky redu.
Manufacture

Diodes

Datasheet
Download DMS3016SSS Datasheet




 DMS3016SSS
DMS3016SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Low RDS(ON) - minimizes conduction losses
Low VSD - reducing the losses due to body diode conduction
Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – IAR and EAR rated
Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.072 grams (approximate)
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3) VGS = 4.5V
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Note 4) (Note 5)
Repetitive Avalanche Energy (Note 4) (Note 5) L = 0.3mH
SD
SD
SD
GD
Top View
Internal Schematic
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
IAR
EAR
Value
30
±12
9.8
6.3
90
13
25.4
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.54
81
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
Unit
W
°C/W
°C
DMS3016SSS
Document number: DS32266 Rev. 3 - 2
1 of 6
www.diodes.com
September 2010
© Diodes Incorporated




 DMS3016SSS
DMS3016SSS
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
IS
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Min
30
-
-
1.0
-
-
-
-
-
-
-
-
0.53
-
-
-
-
-
-
-
-
Typ
-
-
-
-
9
11
5
0.4
-
1849
158
123
2.68
18.5
43
4.7
4.0
6.62
8.73
36.41
4.69
Max
-
0.1
±100
2.3
13
16
-
1
5
-
-
-
4.82
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 250μA
mA VDS = 30V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 9.8A
VGS = 4.5V, ID = 9.8A
S VDS = 5V, ID = 9.8A
V VGS = 0V, IS = 1A
A-
pF
pF
VDS =15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS =0V, VGS = 0V, f = 1MHz
nC
nC VDS = 15V, VGS = 10V,
nC ID = 9.8A
nC
ns
ns VGS = 10V, VDS = 10V,
ns RG = 3, RL = 1.2
ns
30
VGS = 4.5V
25 VGS = 4.0V
VGS = 3.5V
20 VGS = 3.0V
15
10 VGS = 2.5V
5
VGS = 2.0V
VGS = 2.2V
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
30
25 VDS = 5V
20
15
10
5
0
0
VGS = 150°C
VGS = 125°C
VGS = 85°C
VGS = 25°C
VGS = -55°C
0.5 1 1.5 2 2.5 3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMS3016SSS
Document number: DS32266 Rev. 3 - 2
2 of 6
www.diodes.com
September 2010
© Diodes Incorporated




 DMS3016SSS
DMS3016SSS
0.05
0.04
0.03
VGS = 2.5V
0.02
0.01
0
0
1.6
1.4
1.2
VGS = 4.5V
VGS = 10V
5 10 15 20 25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
VGS = 4.5V
ID = 10A
VGS = 10V
ID = 20A
1.0
0.8
0.04
VGS = 4.5V
0.03
0.02
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
0.03
5 10 15 20 25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.02
0.01
VGS = 4.5V
ID = 10A
VGS = 10V
ID = 20A
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
3.0
2.5
2.0
1.5 ID = 100mA
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
20
16
TA = 25°C
12
8
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMS3016SSS
Document number: DS32266 Rev. 3 - 2
3 of 6
www.diodes.com
September 2010
© Diodes Incorporated



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