DMS3019SSD

DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: Low RDS(on) – minimizes conduction loss Low VSD – reducing the losses due to body diode construction Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies Avalanche rugged – IAR and EAR rated Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.072 grams (approximate) Top View D2 G2 D2 S2/D1 G1 S2/D...