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BRIDGE RECTIFIER. DFBR030U3LP Datasheet

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BRIDGE RECTIFIER. DFBR030U3LP Datasheet






DFBR030U3LP RECTIFIER. Datasheet pdf. Equivalent




DFBR030U3LP RECTIFIER. Datasheet pdf. Equivalent





Part

DFBR030U3LP

Description

FULL BRIDGE RECTIFIER



Feature


ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON L1_2 L1_1 Features Dual 30V N-Channel MOSFETs (Q1, Q2) with Dual 3.0A Super Barrier Rectifier Diodes (D1, D2) packa ged in a 4.0 x 4.0 x 0.6mm DFN package Full-Bridge Rectifier Block Super Bar rier Rectifiers (D1, D2)  Ultra low forward voltage drop  Patented Super Barrier Rectifier technology  +150 C operating temperature .
Manufacture

Diodes

Datasheet
Download DFBR030U3LP Datasheet


Diodes DFBR030U3LP

DFBR030U3LP;  ±8kV ESD protection (HBM, 3B)  25kV ESD protection (IEC61000-4-2 Leve l 4, Air Discharge) N-Channel MOSFET ( Q1, Q2)  Low On-Resistance to minimi ze conduction loss  Low Gate Thresho ld Voltage  Low Input Capacitance Fast Switching Speed  Low Input/Ou tput Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device .


Diodes DFBR030U3LP

(Note 3) DFBR030U3LP 3.0A SBR® FULL BR IDGE RECTIFIER Mechanical Data Case: U -DFN4040-8 Case Material: Molded Plast ic, “Green” Molding Compound; UL Fl ammability Classification Rating 94V-0 Moisture .


Diodes DFBR030U3LP

.

Part

DFBR030U3LP

Description

FULL BRIDGE RECTIFIER



Feature


ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON L1_2 L1_1 Features Dual 30V N-Channel MOSFETs (Q1, Q2) with Dual 3.0A Super Barrier Rectifier Diodes (D1, D2) packa ged in a 4.0 x 4.0 x 0.6mm DFN package Full-Bridge Rectifier Block Super Bar rier Rectifiers (D1, D2)  Ultra low forward voltage drop  Patented Super Barrier Rectifier technology  +150 C operating temperature .
Manufacture

Diodes

Datasheet
Download DFBR030U3LP Datasheet




 DFBR030U3LP
Features
Dual 30V N-Channel MOSFETs (Q1, Q2) with Dual 3.0A Super
Barrier Rectifier Diodes (D1, D2) packaged in a 4.0 x 4.0 x
0.6mm DFN package
Full-Bridge Rectifier Block
Super Barrier Rectifiers (D1, D2)
Ultra low forward voltage drop
Patented Super Barrier Rectifier technology
+150°C operating temperature
±8kV ESD protection (HBM, 3B)
±25kV ESD protection (IEC61000-4-2 Level 4, Air
Discharge)
N-Channel MOSFET (Q1, Q2)
Low On-Resistance to minimize conduction loss
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
DFBR030U3LP
3.0A SBR® FULL BRIDGE RECTIFIER
Mechanical Data
Case: U-DFN4040-8
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper Leadframe (Lead-Free Plating);
Solderable per MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram
Weight: 0.031 grams
Applications
Wireless Charging
AC-DC Rectification
Optimized for Power Management Applications
for Portable Products
U-DFN4040-8
VOUT
D1
L1_1
Q1
D2
L1_2
Q2
VOUT
L1_2
GND2
GND2
VOUT
VOUT
L1_1
GND1
GND1
GND1 GND2
Device Schematic (Dual Channel)
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DFBR030U3LP-13
Compliance
Standard
Case
U-DFN4040-8
Packaging
4,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN4040-8
FB302
YYWW
FB302 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 for 2015)
WW = Week Code (01 to 53)
SBR is a registered trademark of Diodes Incorporated.
DFBR030U3LP
Document number: DS35994 Rev. 8 - 2
1 of 8
www.diodes.com
June 2015
© Diodes Incorporated




 DFBR030U3LP
DFBR030U3LP
Maximum Ratings D1, D2 (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
VRRM
VRWM
VRM
VR(RMS)
IO
IFSM
Value
30
21
3.0
20
Unit
V
V
A
A
Maximum Ratings Q1, Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Input Voltage Between Two MOSFET Drain
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Symbol
VLL
VDSS
VGSS
ID
Value
30
30
20
3.2
Units
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
500
250
1000
125
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics D1, D2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Symbol
V(BR)R
Forward Voltage Drop
VF
Leakage Current (Note 7)
IR
Min
30
Typ
0.25
0.33
0.36
0.24
0.33
0.35
50
100
6
10
Max
0.278
0.37
0.42
0.27
0.36
0.40
150
400
15
20
Unit
V
V
µA
µA
mA
mA
Test Condition
IR = 400µA
IF = 0.1A, TJ = +25°C
IF = 1.0A, TJ = +25°C
IF = 2.0A, TJ = +25°C
IF = 0.1A, TJ = +125°C
IF = 1.0A, TJ = +125°C
IF = 2.0A, TJ = +125°C
VR = 5V, TJ = +25°C
VR = 30V, TJ = +25°C
VR = 5V, TJ = +125°C
VR = 30V, TJ = +125°C
Notes:
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Part mounted on FR-4 board with 1-in sq pad layout, 2oz Cu.
7. Short duration pulse test used to minimize self-heating effect. Pulse width ≤ 300μs, duty cycle ≤ 2%.
SBR is a registered trademark of Diodes Incorporated.
DFBR030U3LP
Document number: DS35994 Rev. 8 - 2
2 of 8
www.diodes.com
June 2015
© Diodes Incorporated




 DFBR030U3LP
DFBR030U3LP
Electrical Characteristics Q1, Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
BVDSS
IDSS
IGSS
30
VGS(th)
1
Typ Max

220
 200
2.2
Static Drain-Source On-Resistance
13 --
RDS(ON)
17
22
26
--
23 32
Forward Transconductance
Diode Forward Voltage (Note 7)
gfs 7
VSD 0.5 1.2
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 30V, VGS = 0V
µA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.0A
mVGS = 10V, ID = 3.2A
VGS = 4.5V, ID = 2.0A
VGS = 4.5V, ID = 3.2A
S VDS =15V, ID = 2.0A
V VGS = 0V, IS = 2.25A
Electrical Characteristics DFBR030U3LP (@TA = +25°C, unless otherwise specified.)
Characteristic
Rectifying Forward Voltage (Note 7)
Symbol Min
Vfd2
Typ
0.45
Max
0.56
Rectifier leakage current
Ileak
30 1000
Rectifier Reverse leakage current
Irleak
20 1000
Note:
7. Short duration pulse test used to minimize self-heating effect. Pulse width ≤ 300μs, duty cycle ≤ 2%.
Unit
V
µA
µA
Test Condition
Input voltage VLL = ±5V;
The output current of Rectifier
IOUT = 2A
Input voltage VLL = 16V;
No Load on the Rectifier output
Input voltage VLL = 0V;
The output voltage of the
Rectifier VOUT = 5V
SBR is a registered trademark of Diodes Incorporated.
DFBR030U3LP
Document number: DS35994 Rev. 8 - 2
3 of 8
www.diodes.com
June 2015
© Diodes Incorporated



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