DMS2220LFDB

DMS2220LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER Features  Low On-Resistance  95m @VGS = -4.5V  120m @VGS = -2.5V  86m (Typ) @VGS = -1.8V  Low Gate Threshold Voltage, -1.3V Max  Fast Switching Speed  Low Input/Output Leakage  Incorporates Low VF Super Barrier Rectifier (SBR®)  Low Profile, 0.5mm Max Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type B) Bottom View D NC A 3 2 1 Q1 D1 4 5 6 S GK Top View Internal Schematic A NC D K D KGS Bottom View Pin Configuration Ordering Information (Note 4) Notes: Part Number ...