Document
DMS2220LFDB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER
Features
Low On-Resistance 95m @VGS = -4.5V 120m @VGS = -2.5V 86m (Typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR®) Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
Bottom View
D NC A
3
2
1
Q1
D1
4
5
6
S GK
Top View Internal Schematic
A NC D
K
D
KGS
Bottom View Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number DMS2220LFDB-7
Case U-DFN2020-6 (Type B)
Packaging 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 10 - 2
1 of 8 www.diodes.com
February 2020
© Diodes Incorporated
Marking Information
Site 1
DMS2220LFDB
ME = Marking Code
YM = Date Code Marking
YM
ME
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
Date Code Key Year Code
Month Code
2008 V
Jan 1
…
2020 2021 2022 2023 2024 2025 2026 2027 2028 2029
…
H
I
J
K
L
M
N
O
P
R
Feb
Mar
Apr
May
Jun
2
3
4
5
6
Jul
Aug
Sep
Oct
Nov
Dec
7
8
9
O
N
D
Site 2
ME= Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday)
Date Code Key Year Code
2008 8
Week Code
…
2020 2021 2022 2023 2024 2025 2026 2027 2028 2029
…
0
1
2
3
4
5
6
7
8
9
1-26
27-52
53
A-Z
a-z
z
Internal Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
Code
T
U
V
W
X
Y
Z
DMS2220LFDB
Document number: DS31546 Rev. 10 - 2
2 of 8 www.diodes.com
February 2020
© Diodes Incorporated
DMS2220LFDB
Maximum Ratings – TOTAL DEVICE (@TA = +25°C, unless otherwise specified.)
Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Symbol PD RθJA
TJ, TSTG
Value 1.4 89
-55 to +150
Unit W
°C/W °C
Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current (Note 6)
Symbol VDSS VGSS ID IDM
Value -20 ±12 -3.5 -12
Unit V V A A
Maximum Ratings – SBR – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM
VRWM
20
V
VR
RMS Reverse Voltage
VR(RMS)
14
V
Average Rectified Output Current
IO
1
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
3
A
Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS
-20
IDSS
—
IGSS
— —
—
—
V VGS = 0V, ID = -250µA
—
-1
µA VDS = -20V, VGS = 0V
— —
±100 ±800
nA VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V
VGS(TH) -0.45
—
-1.3
V VDS = VGS, ID = -250µA
—
60
95
VGS.