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DMS2220LFDB Dataheets PDF



Part Number DMS2220LFDB
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMS2220LFDB DatasheetDMS2220LFDB Datasheet (PDF)

DMS2220LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER Features  Low On-Resistance  95m @VGS = -4.5V  120m @VGS = -2.5V  86m (Typ) @VGS = -1.8V  Low Gate Threshold Voltage, -1.3V Max  Fast Switching Speed  Low Input/Output Leakage  Incorporates Low VF Super Barrier Rectifier (SBR®)  Low Profile, 0.5mm Max Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive application.

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DMS2220LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER Features  Low On-Resistance  95m @VGS = -4.5V  120m @VGS = -2.5V  86m (Typ) @VGS = -1.8V  Low Gate Threshold Voltage, -1.3V Max  Fast Switching Speed  Low Input/Output Leakage  Incorporates Low VF Super Barrier Rectifier (SBR®)  Low Profile, 0.5mm Max Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type B) Bottom View D NC A 3 2 1 Q1 D1 4 5 6 S GK Top View Internal Schematic A NC D K D KGS Bottom View Pin Configuration Ordering Information (Note 4) Notes: Part Number DMS2220LFDB-7 Case U-DFN2020-6 (Type B) Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 10 - 2 1 of 8 www.diodes.com February 2020 © Diodes Incorporated Marking Information Site 1 DMS2220LFDB ME = Marking Code YM = Date Code Marking YM ME Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Dot Denotes Pin 1 Date Code Key Year Code Month Code 2008 V Jan 1 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 … H I J K L M N O P R Feb Mar Apr May Jun 2 3 4 5 6 Jul Aug Sep Oct Nov Dec 7 8 9 O N D Site 2 ME= Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year Code 2008 8 Week Code … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 … 0 1 2 3 4 5 6 7 8 9 1-26 27-52 53 A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z DMS2220LFDB Document number: DS31546 Rev. 10 - 2 2 of 8 www.diodes.com February 2020 © Diodes Incorporated DMS2220LFDB Maximum Ratings – TOTAL DEVICE (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.4 89 -55 to +150 Unit W °C/W °C Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current (Note 6) Symbol VDSS VGSS ID IDM Value -20 ±12 -3.5 -12 Unit V V A A Maximum Ratings – SBR – D1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM 20 V VR RMS Reverse Voltage VR(RMS) 14 V Average Rectified Output Current IO 1 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 3 A Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Min Typ Max Unit Test Condition BVDSS -20 IDSS — IGSS — — — — V VGS = 0V, ID = -250µA — -1 µA VDS = -20V, VGS = 0V — — ±100 ±800 nA VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VGS(TH) -0.45 — -1.3 V VDS = VGS, ID = -250µA — 60 95 VGS.


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