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NPN TRANSISTOR. DMB53D0UDW Datasheet

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NPN TRANSISTOR. DMB53D0UDW Datasheet






DMB53D0UDW TRANSISTOR. Datasheet pdf. Equivalent




DMB53D0UDW TRANSISTOR. Datasheet pdf. Equivalent





Part

DMB53D0UDW

Description

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR



Feature


DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MO SFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • V ery Low Gate Threshold Voltage, 1.0V ma x • Low Input Capacitance • Fast Sw itching Speed • Low Input/Output Leak age • Ultra-Small Surface Mount Packa ge • Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) • ESD Pro.
Manufacture

Diodes

Datasheet
Download DMB53D0UDW Datasheet


Diodes DMB53D0UDW

DMB53D0UDW; tected MOSFET Gate up to 2kV • "Green" Device (Note 3) • Qualified to AEC-Q 101 Standards for High Reliability Mec hanical Data • Case: SOT-363 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Class ification Rating 94V-0 • Moisture Sen sitivity: Level 1 per J-STD-020 • Ter minal Connections: See Diagram • Term inals: Finish - Matte Tin annealed o.


Diodes DMB53D0UDW

ver Alloy 42 Lead frame. Solderable per MIL-STD-202, Method 208 • Marking Inf ormation: See Page 5 • Ordering Infor mation: See Page 5 • Weight: 0.006 gr ams (approximate) SOT-363 D2 Q1 B E Q2 ESD protected gate up t .


Diodes DMB53D0UDW

.

Part

DMB53D0UDW

Description

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR



Feature


DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MO SFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • V ery Low Gate Threshold Voltage, 1.0V ma x • Low Input Capacitance • Fast Sw itching Speed • Low Input/Output Leak age • Ultra-Small Surface Mount Packa ge • Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) • ESD Pro.
Manufacture

Diodes

Datasheet
Download DMB53D0UDW Datasheet




 DMB53D0UDW
DMB53D0UDW
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
Features
N-Channel MOSFET and NPN Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
ESD Protected MOSFET Gate up to 2kV
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.006 grams (approximate)
SOT-363
D2
Q1
B
E
Q2
ESD protected gate up to 2kV
TOP VIEW
S2 G2 C
TOP VIEW
Internal Schematic
Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Continuous
Symbol
VDSS
VGSS
ID
IDM
Value
50
±12
160
560
Units
V
V
mA
mA
Maximum Ratings - NPN Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMB53D0UDW
Document number: DS31675 Rev. 5 - 2
1 of 7
www.diodes.com
December 2009
© Diodes Incorporated




 DMB53D0UDW
DMB53D0UDW
Electrical Characteristics - MOSFET @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS
50
IDSS
10
IGSS
1.0
5.0
VGS(th)
0.7
0.8
1.0
RDS (ON)
3.1
4
4
5
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gFS
Ciss
Coss
Crss
180
25
5
2.1
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 50V, VGS = 0V
μA
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 4V, ID = 100mA
VGS = 2.5V, ID = 80mA
mS
VDS = 10V, ID = 100mA,
f = 1.0KHz
pF
pF VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
Electrical Characteristics - NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage
(Note 4) V(BR)CBO
50
V
Collector-Emitter Breakdown Voltage
(Note 4) V(BR)CEO
45
V
Emitter-Base Breakdown Voltage
(Note 4) V(BR)EBO
6
——
V
DC Current Gain
(Note 4)
hFE
200
290
450
Collector-Emitter Saturation Voltage
(Note 4)
VCE(SAT)
100
300
mV
Base-Emitter Saturation Voltage
(Note 4)
VBE(SAT)
700
900
mV
Base-Emitter Voltage
(Note 4)
VBE
580
660
700
770
mV
Collector Cut-Off Current
(Note 4)
ICBO
15
5.0
nA
µA
Collector-Emitter Cut-Off Current
(Note 4)
ICES
— 100 nA
Gain Bandwidth Product
fT 100 — — MHz
Output Capacitance
COBO
— 4.5 pF
Noise Figure
NF — — 10 dB
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Test Condition
IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
VCB = 30V
VCB = 30V, TA = 150°C
VCE = 45V
VCE = 5.0V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
VCE = 5V, RS = 2.0kΩ,
f = 1.0kHz, BW = 200Hz
DMB53D0UDW
Document number: DS31675 Rev. 5 - 2
2 of 7
www.diodes.com
December 2009
© Diodes Incorporated




 DMB53D0UDW
DMB53D0UDW
MOSFET
0.8 0.5
0.7 VGS = 10V
0.4
0.6 VGS = 4.5V
0.5
0.3
VGS = 3.0V
0.4
0.3
VGS = 2.5V
0.2
0.2
0.1
0
0
VGS = 1.5V
VGS = 1.0V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
10
0.1
0
0
10
VGS = 2.5V
VGS = 4.0V
VDS = 10V
TA = 85°C
TA = 25°C
TA = -55°C
TA = 150°C
TA = 125°C
1 23
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1
0.001
0.01 0.1
ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2.0
1
1
0 0.1 0.2 0.3 0.4 0.5
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
35
1.8
30
1.6
VGS = 4V
ID = 100mA
25 Ciss
1.4
VGS = 2.5V
ID = 80mA
20
1.2 f = 1MHz
15 VGS = 0V
1.0
10
0.8
0.6 5 Coss
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
Crss
0
0 5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
40
DMB53D0UDW
Document number: DS31675 Rev. 5 - 2
3 of 7
www.diodes.com
December 2009
© Diodes Incorporated



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