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NPN TRANSISTOR. DMB53D0UV Datasheet

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NPN TRANSISTOR. DMB53D0UV Datasheet






DMB53D0UV TRANSISTOR. Datasheet pdf. Equivalent




DMB53D0UV TRANSISTOR. Datasheet pdf. Equivalent





Part

DMB53D0UV

Description

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR



Feature


DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOS FET PLUS NPN TRANSISTOR Features • N -Channel MOSFET and NPN Transistor in O ne Package • Low On-Resistance • Ve ry Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Swi tching Speed • Low Input/Output Leaka ge • Ultra-Small Surface Mount Packag e • ESD Protected MOSFET Gate up to 2 kV • Lead, Halogen and Antimony Fr.
Manufacture

Diodes

Datasheet
Download DMB53D0UV Datasheet


Diodes DMB53D0UV

DMB53D0UV; ee, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q1 01 Standards for High Reliability Mech anical Data • Case: SOT563 • Case M aterial: Molded Plastic, “Green” Mo lding Compound. UL Flammability Classif ication Rating 94V-0 • Moisture Sensi tivity: Level 1 per J-STD-020 • Termi nal Connections: See Diagram • Termin als: Finish - Matte Tin annealed ove.


Diodes DMB53D0UV

r Copper lead frame. Solderable per MIL- STD-202, Method 208 • Weight: 0.006 g rams (approximate) SOT563 D2 Q1 B E Q2 ESD PROTECTED TO 2kV Top View Bo ttom View S2 G2 C Top View Internal Sc hematic Ordering Informatio .


Diodes DMB53D0UV

.

Part

DMB53D0UV

Description

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR



Feature


DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOS FET PLUS NPN TRANSISTOR Features • N -Channel MOSFET and NPN Transistor in O ne Package • Low On-Resistance • Ve ry Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Swi tching Speed • Low Input/Output Leaka ge • Ultra-Small Surface Mount Packag e • ESD Protected MOSFET Gate up to 2 kV • Lead, Halogen and Antimony Fr.
Manufacture

Diodes

Datasheet
Download DMB53D0UV Datasheet




 DMB53D0UV
DMB53D0UV
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
Features
N-Channel MOSFET and NPN Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected MOSFET Gate up to 2kV
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT563
D2
Q1
B
E
Q2
ESD PROTECTED TO 2kV
Top View
Bottom View
S2 G2 C
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMB53D0UV-7
DMB53D0UV-13
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MB1 YM
MB1 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
2010
X
2011
Y
Mar Apr May
345
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep Oct
9O
2016
D
Nov
N
2017
E
Dec
D
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
1 of 7
www.diodes.com
March 2012
© Diodes Incorporated




 DMB53D0UV
Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4)
Pulsed Drain Current (Note 4)
Continuous
Symbol
VDSS
VGSS
ID
IDM
Value
50
±12
160
560
DMB53D0UV
Units
V
V
mA
mA
Maximum Ratings - NPN Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics - MOSFET @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS
50
IDSS
10
IGSS
1.0
5.0
VGS(th)
0.7
0.8
1.0
RDS (ON)
3.1
4
4
5
Forward Transconductance
gFS 180
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss 25
Coss
5
Crss
2.1
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 50V, VGS = 0V
μA
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 4V, ID = 100mA
VGS = 2.5V, ID = 80mA
mS
VDS = 10V, ID = 100mA,
f = 1.0KHz
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
2 of 7
www.diodes.com
March 2012
© Diodes Incorporated




 DMB53D0UV
DMB53D0UV
Electrical Characteristics - NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(SAT)
Min
50
45
6
200
Typ Max Unit
—— V
—— V
—— V
290 450
100
300
mV
Base-Emitter Saturation Voltage
(Note 5)
VBE(SAT)
700
900
mV
Base-Emitter Voltage
(Note 5)
VBE
580
660
700
770
mV
Collector-Cutoff Current
Collector-Emitter Cut-Off Current
(Note 5)
(Note 5)
ICBO
ICBO
ICES
15
5.0
nA
µA
— 100 nA
Gain Bandwidth Product
fT 100 — — MHz
Output Capacitance
COBO
— 4.5 pF
Noise Figure
NF — — 10 dB
Test Condition
IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
VCB = 30V
VCB = 30V, TA = 150°C
VCE = 45V
VCE = 5.0V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
VCE = 5V, RS = 2.0kΩ,
f = 1.0kHz, BW = 200Hz
MOSFET
0.8 0.5
0.7 VGS = 10V
0.4
0.6 VGS = 4.5V
0.5
0.3
VGS = 3.0V
0.4
0.3
VGS = 2.5V
0.2
0.2
0.1
0
0
VGS = 1.5V
VGS = 1.0V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0.1
0
0
VDS = 10V
TA = 85°C
TA = 25°C
TA = -55°C
TA = 150°C
TA = 125°C
1 23
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
3 of 7
www.diodes.com
March 2012
© Diodes Incorporated



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