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MOSFET H-BRIDGE. DMHC4035LSDQ Datasheet

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MOSFET H-BRIDGE. DMHC4035LSDQ Datasheet






DMHC4035LSDQ H-BRIDGE. Datasheet pdf. Equivalent




DMHC4035LSDQ H-BRIDGE. Datasheet pdf. Equivalent





Part

DMHC4035LSDQ

Description

40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT DMHC4035LSDQ 40V COMPLEMENTARY ENHANCE MENT MODE MOSFET H-BRIDGE Product Summ ary Device N-Channel P-Channel V(BR)D SS 40V -40V RDS(ON) max 45mΩ @ VGS = 10V 58mΩ @ VGS = 4.5V 65mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V ID max TA = +25°C 4.5A 4A -3.7A -2.9A Descripti on and Applications This new generation complementary MOSFET H-Bri.
Manufacture

Diodes

Datasheet
Download DMHC4035LSDQ Datasheet


Diodes DMHC4035LSDQ

DMHC4035LSDQ; dge features 2 N and 2 P channel in an S OIC package. Qualified to AECQ101 the H bridge is ideally suited to driving : • Solenoids • DC Motors • Audio O utputs Features • 2 x N + 2 x P chan nels in a SOIC package • Low On-Resis tance • Low Input Capacitance • Fas t Switching Speed • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green.


Diodes DMHC4035LSDQ

” Device (Note 3) • Qualified to AEC -Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data • Case: SO-8 • Case Material: Mold ed Plastic, "Green" Molding Compound. U L Flammability Classification Ratin .


Diodes DMHC4035LSDQ

.

Part

DMHC4035LSDQ

Description

40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT DMHC4035LSDQ 40V COMPLEMENTARY ENHANCE MENT MODE MOSFET H-BRIDGE Product Summ ary Device N-Channel P-Channel V(BR)D SS 40V -40V RDS(ON) max 45mΩ @ VGS = 10V 58mΩ @ VGS = 4.5V 65mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V ID max TA = +25°C 4.5A 4A -3.7A -2.9A Descripti on and Applications This new generation complementary MOSFET H-Bri.
Manufacture

Diodes

Datasheet
Download DMHC4035LSDQ Datasheet




 DMHC4035LSDQ
DMHC4035LSDQ
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
N-Channel
P-Channel
V(BR)DSS
40V
-40V
RDS(ON) max
45m@ VGS = 10V
58m@ VGS = 4.5V
65m@ VGS = -10V
100m@ VGS = -4.5V
ID max
TA = +25°C
4.5A
4A
-3.7A
-2.9A
Description and Applications
This new generation complementary MOSFET H-Bridge features
2 N and 2 P channel in an SOIC package. Qualified to AECQ101 the
H bridge is ideally suited to driving :
Solenoids
DC Motors
Audio Outputs
Features
2 x N + 2 x P channels in a SOIC package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
H-Bridge
Top View
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMHC4035LSDQ-13
Compliance
Automotive
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C4035LS
YY WW
1
DMHC4035LSDQ
Document number: DS37219 Rev. 1 - 2
4
= Manufacturer’s Marking
C4035LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
1 of 9
www.diodes.com
May 2014
© Diodes Incorporated




 DMHC4035LSDQ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Note:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMHC4035LSDQ
Value
1.5
85
53
15
-55 to +150
Units
W
°C/W
°C
Value
40
±20
4.5
3.5
5.8
4.5
4
3.1
5.1
4
1.5
25
Units
V
V
A
A
A
A
A
A
Value
-40
±20
-3.7
-2.9
-4.8
-3.8
-2.9
-2.3
-3.9
-3.0
-1.5
-15
Units
V
V
A
A
A
A
A
A
DMHC4035LSDQ
Document number: DS37219 Rev. 1 - 2
2 of 9
www.diodes.com
May 2014
© Diodes Incorporated




 DMHC4035LSDQ
DMHC4035LSDQ
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
40
1
Typ Max Unit
——
V
— 1 μA
— ±100 nA
—3
V
26
35
45
58
m
0.7 1
V
574 —
87.8 —
38.7 —
1.6 —
5.9 —
12.5 —
1.7 —
2.2 —
3.1 —
2.6 —
15 —
5.5 —
6.5 —
1.2 —
pF
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 250μA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.9A
VGS = 4.5V, ID = 3.5A
VGS = 0V, IS = 1.25A
VDS = 20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 20V, ID = 3.9A
VDD = 20V, VGS = 10V,
RL = 20, RG = 6,
IF = 3.9A, di/dt = 500A/μs
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-40
VGS(th)
RDS (ON)
VSD
-1
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Typ Max
——
— -1
— ±100
— -3
49 65
73 100
-0.7 -1.2
587 —
88.1 —
40.2 —
12.3 —
5.4 —
11.1 —
1.5 —
2—
3.6 —
2.9 —
36.3 —
15.3 —
15.5 —
16.9 —
Unit
V
μA
nA
V
m
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250μA
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -3.3A
VGS = 0V, IS = -1A
VDS = -20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -20V, ID = -4.2A
VDD = -15V, VGS = -10V,
RG = 6, ID = -1A
IF = -4.2A, di/dt = 500A/μs
DMHC4035LSDQ
Document number: DS37219 Rev. 1 - 2
3 of 9
www.diodes.com
May 2014
© Diodes Incorporated



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