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MOSFET H-BRIDGE. ZXMHC6A07T8 Datasheet

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MOSFET H-BRIDGE. ZXMHC6A07T8 Datasheet
















ZXMHC6A07T8 H-BRIDGE. Datasheet pdf. Equivalent













Part

ZXMHC6A07T8

Description

COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVANCE INNEFWORPRMOADTIUOCNT Green ZXM HC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel BVDSS 60V - 60V RDS(ON) max 0.3Ω @ VGS = 10V 0.4 5Ω @ VGS = 4.5V 0.425Ω @ VGS = -10V 0.63Ω @ VGS = -4.5V ID max TA = +25 °C 1.8A 1.4A -1.5A -1.2A Description This new generation complementary MOSFE T H-Bridge features low on-.
Manufacture

Diodes

Datasheet
Download ZXMHC6A07T8 Datasheet


Diodes ZXMHC6A07T8

ZXMHC6A07T8; resistance achievable with low gate driv e. Applications DC Motor Control DC- AC Inverters Features 2 x N + 2 x P C hannels in a SOIC Package Low On-Resis tance Low Input Capacitance Fast Swit ching Speed Lead-Free Finish; RoHS Com pliant (Notes 1 & 2) Halogen and Antim ony Free. “Green” Device (Note 3) M echanical Data Case: SM-8 (8 LEAD SOT2 23) Case Material: Mo.


Diodes ZXMHC6A07T8

lded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 9 4V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indica tor: See Diagram Terminals: Finish  Matte Tin A .


Diodes ZXMHC6A07T8

.





Part

ZXMHC6A07T8

Description

COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVANCE INNEFWORPRMOADTIUOCNT Green ZXM HC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel BVDSS 60V - 60V RDS(ON) max 0.3Ω @ VGS = 10V 0.4 5Ω @ VGS = 4.5V 0.425Ω @ VGS = -10V 0.63Ω @ VGS = -4.5V ID max TA = +25 °C 1.8A 1.4A -1.5A -1.2A Description This new generation complementary MOSFE T H-Bridge features low on-.
Manufacture

Diodes

Datasheet
Download ZXMHC6A07T8 Datasheet




 ZXMHC6A07T8
Green ZXMHC6A07T8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
N-Channel
P-Channel
BVDSS
60V
-60V
RDS(ON) max
0.3@ VGS = 10V
0.45Ω @ VGS = 4.5V
0.425Ω @ VGS = -10V
0.63Ω @ VGS = -4.5V
ID max
TA = +25°C
1.8A
1.4A
-1.5A
-1.2A
Description
This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.
Applications
DC Motor Control
DC-AC Inverters
Features
2 x N + 2 x P Channels in a SOIC Package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SM-8 (8 LEAD SOT223)
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.117 grams (Approximate)
SM-8
PIN1
G3
S2 S3
G2
G1
G4
D3 D4
S1 S4
D1 D2
Top View
Top View Pin
Configuration
Internal Schematic
Ordering Information (Note 4)
Part Number
ZXMHC6A07T8TA
ZXMHC6A07T8TC
Reel Size
7’’
13’’
Tape Width
12mm
12mm
Quantity Per Reel
1,000 units
4,000 units
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SM-8
PIN1
ZXMH
C6A07
ZXMHC6A07 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZXMHC6A07T8
Document number: DS33508 Rev. 4 - 2
1 of 10
www.diodes.com
April 2015
© Diodes Incorporated




 ZXMHC6A07T8
ZXMHC6A07T8
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 8)
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)
Pulsed Source Current (Note 7)
Steady
State
TA = +25°C (Note 6)
TA = +70°C (Note 6)
TA = +25°C (Note 5)
Symbol
VDSS
VGSS
ID
IS
IDM
ISM
N-channel
60
±20
1.8
1.4
1.6
2.3
8.4
8.4
P-channel
-60
±20
-1.5
-1.2
-1.3
-2.1
-7.2
-7.2
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 8)
Linear Derating Factor
Total Power Dissipation (Note 8)
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient (Note 8)
Operating and Storage Temperature Range
TA = +25°C (Note 5)
TA = +25°C (Note 6)
Steady State (Note 5)
Steady State (Note 6)
Symbol
PD
PD
RθJA
TJ, TSTG
Value
1.3
10.4
1.7
13.6
94.5
73.3
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink
split into two equal areas one for each drain connection.
6. For a device surface mounted on FR4 PCB measured at t 10 seconds.
7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300μs - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
8. For device with one active die.
ZXMHC6A07T8
Document number: DS33508 Rev. 4 - 2
2 of 10
www.diodes.com
April 2015
© Diodes Incorporated




 ZXMHC6A07T8
Typical Characteristics
ZXMHC6A07T8
ZXMHC6A07T8
Document number: DS33508 Rev. 4 - 2
3 of 10
www.diodes.com
April 2015
© Diodes Incorporated




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