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N-CHANNEL MOSFET. DMJ70H1D3SJ3 Datasheet

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N-CHANNEL MOSFET. DMJ70H1D3SJ3 Datasheet






DMJ70H1D3SJ3 MOSFET. Datasheet pdf. Equivalent




DMJ70H1D3SJ3 MOSFET. Datasheet pdf. Equivalent





Part

DMJ70H1D3SJ3

Description

N-CHANNEL MOSFET



Feature


NEW PRODUCT Product Summary BVDSS 700V RDS(ON) Max 1.3Ω @ VGS = 10V ID TC = +25°C 4.6A Description and Applica tions This MOSFET is designed to minimi ze the on-state resistance (RDS(ON)), y et maintain superior switching performa nce, making it ideal for high-efficienc y power management applications. Motor Control Backlighting DC-DC Converter s Power Management F.
Manufacture

Diodes

Datasheet
Download DMJ70H1D3SJ3 Datasheet


Diodes DMJ70H1D3SJ3

DMJ70H1D3SJ3; unctions DMJ70H1D3SJ3 N-CHANNEL ENHANCE MENT MODE MOSFET Features and Benefits Low On-Resistance High BVDSS Rating f or Power Application Low Input Capacit ance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre e. “Green” Device (Note 3) Mechanic al Data Case: TO251 Case Material: Mo lded Plastic, “Green” Molding Compo und. UL Flammability Class.


Diodes DMJ70H1D3SJ3

ification Rating 94V-0 Terminal Connect ions: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadfr ame. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO251 Top .


Diodes DMJ70H1D3SJ3

.

Part

DMJ70H1D3SJ3

Description

N-CHANNEL MOSFET



Feature


NEW PRODUCT Product Summary BVDSS 700V RDS(ON) Max 1.3Ω @ VGS = 10V ID TC = +25°C 4.6A Description and Applica tions This MOSFET is designed to minimi ze the on-state resistance (RDS(ON)), y et maintain superior switching performa nce, making it ideal for high-efficienc y power management applications. Motor Control Backlighting DC-DC Converter s Power Management F.
Manufacture

Diodes

Datasheet
Download DMJ70H1D3SJ3 Datasheet




 DMJ70H1D3SJ3
Product Summary
BVDSS
700V
RDS(ON) Max
1.3@ VGS = 10V
ID
TC = +25°C
4.6A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
DMJ70H1D3SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO251
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO251
Top View
TO251
Bottom View
GDS
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMJ70H1D3SJ3
TO251
75 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
TO251
7N70SJ
YYWW
=Manufacturers Marking
7N70SJ = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Digit of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
DMJ70H1D3SJ3
Document number: DS37825 Rev. 4 - 2
1 of 7
www.diodes.com
January 2016
© Diodes Incorporated




 DMJ70H1D3SJ3
DMJ70H1D3SJ3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt (Note 7)
TC = +25°C
TC = +100°C
L = 60mH
L = 60mH
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
Value
700
±30
4.6
2.9
3.0
5.4
1.1
40
5
Units
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RΘJA
RΘJC
TJ, TSTG
Value
41
16
79
3.0
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time (TJ = +150°C)
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Charge (TJ = +150°C)
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
tRR
QRR
QRR
Min
700
2






Typ
2.9
1.0
0.9
351
66
1.1
3.5
13.9
1.9
8.5
8.5
11.6
24.5
10
212
251
1.8
2.3
Max
1
100
4
1.3
1.3






Unit
V
µA
nA
V
V
pF
nC
ns
ns
ns
µC
µC
Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
VGS = 0V, IS = 5A
VDS = 50V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 560V, ID = 5A,
VGS = 10V
VDD = 350V, VGS = 10V,
RG = 4.7, ID = 2.5A
IS = 5A, dI/dt = 100A/μs
DMJ70H1D3SJ3
Document number: DS37825 Rev. 4 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated




 DMJ70H1D3SJ3
DMJ70H1D3SJ3
6.0 VGS = 25V
VGS = 15V
5.0 VGS = 10V
VGS = 5.5V
VGS = 8.0V
4.0
VGS = 6.0V
VGS = 5.0V
3.0
2.0 VGS = 4.5V
1.0
0.0
0
VGS = 4.0V
VGS = 3.5V
1234 56789
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
10
5
VDS = 20V
4
3
TA = 150°C
2
TA = 125°C
1 TA = 85°C
TA = 25°C
TA = -55°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
25
1.8
1.6 4
1.4
1.2 VGS = 10V
1
0.8
3
ID = 2.5A
2
0.6
0.4 1
0.2
00 1 2 3 4
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
5
VGS = 10V
4 TA = 150°C
5
3 TA = 125°C
TA = 85°C
2
TA = 25°C
1
TA = -55°C
0
012 345
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
5
4.5
4
3.5
VGS = 10V
3 ID = 5A
2.5
2
1.5
1
VGS = 5.0V
ID = 1A
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMJ70H1D3SJ3
Document number: DS37825 Rev. 4 - 2
3 of 7
www.diodes.com
January 2016
© Diodes Incorporated



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