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N-CHANNEL MOSFET. DMJ70H900HJ3 Datasheet

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N-CHANNEL MOSFET. DMJ70H900HJ3 Datasheet






DMJ70H900HJ3 MOSFET. Datasheet pdf. Equivalent




DMJ70H900HJ3 MOSFET. Datasheet pdf. Equivalent





Part

DMJ70H900HJ3

Description

N-CHANNEL MOSFET



Feature


NEW PRODUCT NOT RECOMMENDED FOR NEW DES IGN - NO ALTERNATE PART Green DMJ70H 900HJ3 N-CHANNEL ENHANCEMENT MODE MOSF ET Product Summary BVDSS 700V RDS(ON ) Max 0.9Ω @ VGS = 10V ID Max TC = + 25°C 7A Features and Benefits Low On -Resistance High BVDSS Rating for Powe r Application Low Input Capacitance L ead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and A.
Manufacture

Diodes

Datasheet
Download DMJ70H900HJ3 Datasheet


Diodes DMJ70H900HJ3

DMJ70H900HJ3; ntimony Free. “Green” Device (Note 3 ) Description and Applications This MO SFET is designed to minimize the on-sta te resistance (RDS(ON)) and yet maintai n superior switching performance, makin g it ideal for high-efficiency power ma nagement applications. Motor Control Backlighting DC-DC Converters Power M anagement Functions Mechanical Data C ase: TO251 Case Mater.


Diodes DMJ70H900HJ3

ial: Molded Plastic, “Green” Molding Compound. UL Flammability Classificati on Rating 94V-0 Terminal Connections: See Diagram Terminals: Finish – Matt e Tin Annealed over Copper Leadframe. S olderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO251 (Type TH) Top View Bottom View GDS Top View Pin Configuration Internal Sc hematic Ordering Inform.


Diodes DMJ70H900HJ3

ation (Note 4) Notes: Part Number DMJ7 0H900HJ3 Case TO251 (Type TH) Packagi ng 75 Pieces / Tube 1. EU Directive 20 02/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All app licable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-fr ee/ for more information about Diodes I ncorporated’s definitions of Halogen- and Antimony-free, .

Part

DMJ70H900HJ3

Description

N-CHANNEL MOSFET



Feature


NEW PRODUCT NOT RECOMMENDED FOR NEW DES IGN - NO ALTERNATE PART Green DMJ70H 900HJ3 N-CHANNEL ENHANCEMENT MODE MOSF ET Product Summary BVDSS 700V RDS(ON ) Max 0.9Ω @ VGS = 10V ID Max TC = + 25°C 7A Features and Benefits Low On -Resistance High BVDSS Rating for Powe r Application Low Input Capacitance L ead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and A.
Manufacture

Diodes

Datasheet
Download DMJ70H900HJ3 Datasheet




 DMJ70H900HJ3
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Green
DMJ70H900HJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
700V
RDS(ON) Max
0.9@ VGS = 10V
ID Max
TC = +25°C
7A
Features and Benefits
Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TO251
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO251 (Type TH)
Top View
Bottom View
GDS
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMJ70H900HJ3
Case
TO251 (Type TH)
Packaging
75 Pieces / Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
TO251 (Type TH)
70H900
YYWW
= Manufacturers Marking
70H900 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Two Digits of Year (ex: 19 = 2019)
WW or WW = Week Code (01 to 53)
DMJ70H900HJ3
Document number: DS39000 Rev. 3 - 3
1 of 7
www.diodes.com
August 2019
© Diodes Incorporated




 DMJ70H900HJ3
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt (Note 7)
TC = +25°C
TC = +100°C
L = 60mH
L = 60mH
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
DMJ70H900HJ3
Value
700
±30
7
4
1.6
10
1.3
50
8
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
68
27
79
1.8
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
700
2




Typ
3.4
0.7
0.85
603
230
16
4
18.4
2.1
9.8
8.7
18.7
28.5
10.7
239
2.2
Max
1
100
4
0.9
1.3




Unit
V
µA
nA
V
V
pF
nC
ns
ns
µC
Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5A
VGS = 0V, IS = 5A
VDS = 50V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 560V, ID = 5A,
VGS = 10V
VDD = 350V, VGS = 10V,
Rg = 4.7, ID = 5A
IS = 5A, di/dt = 100A/μs
DMJ70H900HJ3
Document number: DS39000 Rev. 3 - 3
2 of 7
www.diodes.com
August 2019
© Diodes Incorporated




 DMJ70H900HJ3
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
DMJ70H900HJ3
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
VGS = 8.0V
VGS = 6.0V
VGS=5.0V
VGS = 4.5V
VGS = 3.5V VGS = 4.0V
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1
0.9
0.8
0.7
VGS = 10V
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and Gate
Voltage
5
VDS = 10V
4
3
2
TJ=125
1
TJ=150
TJ=85
TJ=25
0
TJ=-55
012345678
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
2.5
2
1.5
1
ID = 1.5A
0.5
0
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2
1.8
VGS = 10V
1.6
150
1.4
1.2
125
1
85
0.8
0.6
25
0.4
0.2
-55
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
3
2.5
2
1.5
1
0.5
VGS = 10V, ID = 0.6A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMJ70H900HJ3
Document number: DS39000 Rev. 3 - 3
3 of 7
www.diodes.com
August 2019
© Diodes Incorporated



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