ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 100V
RDS(ON) Max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID Max TA...
ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 100V
RDS(ON) Max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID Max TA = +25°C
2.6A
2.3A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories,
Transistors, etc.
DMN10H170SVTQ
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Mechanical Data
Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound.
UL Fl...