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N-CHANNEL MOSFET. DMN90H2D2HCTI Datasheet

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N-CHANNEL MOSFET. DMN90H2D2HCTI Datasheet






DMN90H2D2HCTI MOSFET. Datasheet pdf. Equivalent




DMN90H2D2HCTI MOSFET. Datasheet pdf. Equivalent





Part

DMN90H2D2HCTI

Description

N-CHANNEL MOSFET



Feature


ADVANCED INFORMATION DMN90H2D2HCTI N-CH ANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) (Note 7) 1000 V RDS(ON) 2.2Ω@VGS = 10V ID TC = +25 °C 6A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for hig h efficiency power management applicati ons. Applications Motor Control Backl ighting DC-DC Conve.
Manufacture

Diodes

Datasheet
Download DMN90H2D2HCTI Datasheet


Diodes DMN90H2D2HCTI

DMN90H2D2HCTI; rters Power Management Functions Featu res Low Input Capacitance High BVDSS Rating for Power Application Low Input /Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and A ntimony Free. “Green” Device (Note 3) Mechanical Data Case: ITO220AB (Typ e TH) Case Material: Molded Plastic, Green” Molding Compound, UL Flammab ility Classification Ratin.


Diodes DMN90H2D2HCTI

g 94V-0 Terminals: Matte Tin Finish Ann ealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) ITO220AB (Ty pe TH) Top .


Diodes DMN90H2D2HCTI

.

Part

DMN90H2D2HCTI

Description

N-CHANNEL MOSFET



Feature


ADVANCED INFORMATION DMN90H2D2HCTI N-CH ANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) (Note 7) 1000 V RDS(ON) 2.2Ω@VGS = 10V ID TC = +25 °C 6A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for hig h efficiency power management applicati ons. Applications Motor Control Backl ighting DC-DC Conve.
Manufacture

Diodes

Datasheet
Download DMN90H2D2HCTI Datasheet




 DMN90H2D2HCTI
DMN90H2D2HCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max)
(Note 7)
1000V
RDS(ON)
2.2Ω@VGS = 10V
ID
TC = +25°C
6A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: ITO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
ITO220AB (Type TH)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN90H2D2HCTI
Case
ITO220AB (Type TH)
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
90H2D2H
YYWW
DMN90H2D2HCTI
Document number: DS38826 Rev. 4 - 2
=Manufacturer’s Marking
90H2D2H = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW= Week Code (01 to 53)
1 of 7
www.diodes.com
September 2016
© Diodes Incorporated




 DMN90H2D2HCTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Notes 5)
VGS = 10V (Note 6)
Pulsed Drain Current
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
DMN90H2D2HCTI
Value
900
±30
6
4
24
3.5
360
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
PD
RθJC
TJ, TSTG
Max
40
14
3.6
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
900
3




Typ
4
1.7
0.85
1487
113
1
4.7
20.3
6.4
6.1
39
49
51
31
607
8.1
Max
1
100
5
2.2
1.2




Unit
V
µA
nA
V
V
pF
nC
ns
ns
µC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Drain current limited by maximum junction temperature.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3A
VGS = 0V, IS = 6A
VDS = 25V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 720V, ID = 6A,
VGS = 10V
VDD = 450V, VGS = 10V,
Rg = 25, ID = 6A
IF = 6A, dI/dt = 100A/μs
DMN90H2D2HCTI
Document number: DS38826 Rev. 4 - 2
2 of 7
www.diodes.com
September 2016
© Diodes Incorporated




 DMN90H2D2HCTI
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
3
VGS = 7.0V
VGS = 8.0V
VGS = 10.0V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
2468
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
2.5
2 VGS = 10V
1.5
1
0.5
0
012345678
ID, DRAIN-SOURCE CURRENT
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
3
VGS = 10V,ID = 3A
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125
Figure 5T.JO, JnU-RNeCsTisIOtaNncTeEVMaPriaEtRioAnTwUitRhEJu(nc)tion
Temperature
150
DMN90H2D2HCTI
2
1.8 VDS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
150
125
85
25
-55
1234567
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
7
8
6
5
4
3
2
1 ID = 3A
0
0 5 10 15 20 25 30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
6
5
4
3
2
1
VGS = 10V, ID = 3A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMN90H2D2HCTI
Document number: DS38826 Rev. 4 - 2
3 of 7
www.diodes.com
September 2016
© Diodes Incorporated



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