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N-CHANNEL MOSFET. DMN1054UCB4 Datasheet

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N-CHANNEL MOSFET. DMN1054UCB4 Datasheet






DMN1054UCB4 MOSFET. Datasheet pdf. Equivalent




DMN1054UCB4 MOSFET. Datasheet pdf. Equivalent





Part

DMN1054UCB4

Description

N-CHANNEL MOSFET



Feature


Product Summary (Typ. @ VGS = 4.5V, TA = +25°C) VDSS 8V RDS(ON) 35mΩ Qg 9 .6nC Qgd 0.9nC ID 4.0A Description T he DMN1054UCB4 is a Trench MOSFET, engi neered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using C hip-Scale Package (CSP) to increase pow er density by combining low thermal imp edance with minimal R.
Manufacture

Diodes

Datasheet
Download DMN1054UCB4 Datasheet


Diodes DMN1054UCB4

DMN1054UCB4; DS(ON) per footprint area. Applications DC-DC Converters Battery Management Load Switch X1-WLB0808-4 DMN1054UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Featu res Trench-CSP Technology with the Low est on Resistance:  RDS(ON) = 35mΩ to Minimize On-State Losses  Qg = 9 .6nC for Ultra-Fast Switching VGS(TH) = 0.6V Typ. for a Low Turn-On Potential CSP with Footprint 0.8.


Diodes DMN1054UCB4

mm × 0.8mm Height = 0.375mm for Low Pr ofile Totally Lead-Free & Fully RoHS C ompliant (Notes 1 & 2) Halogen and Ant imony Free. “Green” Device (Note 3) Mechanical Data Case: X1-WLB0808-4 T erminal Connections: S .


Diodes DMN1054UCB4

.

Part

DMN1054UCB4

Description

N-CHANNEL MOSFET



Feature


Product Summary (Typ. @ VGS = 4.5V, TA = +25°C) VDSS 8V RDS(ON) 35mΩ Qg 9 .6nC Qgd 0.9nC ID 4.0A Description T he DMN1054UCB4 is a Trench MOSFET, engi neered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using C hip-Scale Package (CSP) to increase pow er density by combining low thermal imp edance with minimal R.
Manufacture

Diodes

Datasheet
Download DMN1054UCB4 Datasheet




 DMN1054UCB4
Product Summary (Typ. @ VGS = 4.5V, TA = +25°C)
VDSS
8V
RDS(ON)
35m
Qg
9.6nC
Qgd
0.9nC
ID
4.0A
Description
The DMN1054UCB4 is a Trench MOSFET, engineered to minimize
on-state losses and switch ultra-fast, making it ideal for high-efficiency
power transfer. Using Chip-Scale Package (CSP) to increase power
density by combining low thermal impedance with minimal RDS(ON)
per footprint area.
Applications
DC-DC Converters
Battery Management
Load Switch
X1-WLB0808-4
DMN1054UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Trench-CSP Technology with the Lowest on Resistance:
RDS(ON) = 35mΩ to Minimize On-State Losses
Qg = 9.6nC for Ultra-Fast Switching
VGS(TH) = 0.6V Typ. for a Low Turn-On Potential
CSP with Footprint 0.8mm × 0.8mm
Height = 0.375mm for Low Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X1-WLB0808-4
Terminal Connections: See Diagram Below
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN1054UCB4-7
Case
X1-WLB0808-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2012
Z
Jan Feb
12
YW = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
DMN1054UCB4
Document number: DS37579 Rev. 5 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMN1054UCB4
DMN1054UCB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Source Current @ VGS = 4.5V (Note 5)
Continuous Source Current @ VGS = 4.5V (Note 6)
Pulsed Drain Current (Pulse duration 10µs, duty cycle ≤1%)
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
ISM
Value
8
±5
2.7
2.2
4.0
3.2
8
0.74
15
Unit
V
V
A
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
.
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
8
—— V
1.0 µA
±100
nA
VGS(TH)
0.35
0.7
V
Static Drain-Source On-Resistance
35 42
38.5 50
RDS(ON)
46.4
65
m
53.3 80
64.7 110
Forward Transfer Admittance
Body Diode Forward Voltage
|Yfs|
VSD
6.0
0.7
1
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Ciss 698 908
Coss
97
127
Crss
90
126
Rg 1.3 2.6
Qg 9.6 15
Gate-Source Charge
Qgs
0.9
Gate-Drain Charge
Qgd
0.9
Turn-On Delay Time
tD(ON)
5.2
10
Turn-On Rise Time
tR 6.7 14
Turn-Off Delay Time
tD(OFF)
16.6
32
Turn-Off Fall Time
tF
2
4
Reverse Recovery Charge
QRR
0.7
1.5
Body Diode Reverse Recovery Time
tRR 6.9 14
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
nC
ns
Value
0.74
169
1.34
93
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Test Condition
VGS = 0V, ID = 250µA
VDS = 8V, VGS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 1.0A
VGS = 2.5V, ID = 1.0A
VGS = 1.8V, ID = 0.5A
VGS = 1.5V, ID = 0.2A
VGS = 1.2V, ID = 0.1A
VDS = 6V, IS = 1.0A
VGS = 0V, IS = 1.0A
VDS = 6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 6V,
ID = 1.0A
VDD = 6V, ID = 1.0A
VGEN = 4.5V, RG = 1Ω, RL = 6Ω
IF = 1A, di/dt = 100A/μs
DMN1054UCB4
Document number: DS37579 Rev. 5 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMN1054UCB4
10
VGS = 8.0V
VGS = 4.5V
8 VGS = 3.0V
VGS = 2.5V
VGS = 2.0V
6 VGS = 1.5V
VGS = 1.2V
4
2
VGS = 1.0V
0
0
0.045
0.5 1 1.5 2 2.5
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
0.04
0.035
VGS = 2.5V
VGS = 4.5V
0.03
0.025
0
0.055
0.05
0.045
0.04
24 6 8
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = 4.5V
10
TA = 150°C
TA = 125°C
TA = 85°C
0.035
TA = 25°C
0.03
0.025
0
TA = -55°C
1 2 3 4 5 6 78
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
9 10
DMN1054UCB4
10
VDS = 5.0V
8
TA = 150°C
6
TA = 125°C
4
TA = 85°C
2
TA = 25°C
TA = -55°C
0
0.5 0.7 0.9 1.1 1.3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.1
1.5
0.08
ID = 1.0A
0.06
0.04
0.02
0
1.4
246
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
8
1.3 VGS = 2.5V
ID = 1A
1.2 VGS = 4.5V
ID = 1A
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMN1054UCB4
Document number: DS37579 Rev. 5 - 2
3 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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