N-CHANNEL MOSFET
Product Summary (Typ. @ VGS = 4.5V, TA = +25°C)
VDSS 8V
RDS(ON) 35mΩ
Qg 9.6nC
Qgd 0.9nC
ID 4.0A
Description
The DM...
Description
Product Summary (Typ. @ VGS = 4.5V, TA = +25°C)
VDSS 8V
RDS(ON) 35mΩ
Qg 9.6nC
Qgd 0.9nC
ID 4.0A
Description
The DMN1054UCB4 is a Trench MOSFET, engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
Applications
DC-DC Converters Battery Management Load Switch
X1-WLB0808-4
DMN1054UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Trench-CSP Technology with the Lowest on Resistance: RDS(ON) = 35mΩ to Minimize On-State Losses Qg = 9.6nC for Ultra-Fast Switching
VGS(TH) = 0.6V Typ. for a Low Turn-On Potential CSP with Footprint 0.8mm × 0.8mm Height = 0.375mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X1-WLB0808-4 Terminal Connections: S...
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