DMN1150UFL3

Product Summary Device BVDSS N-Channel 12V RDS(ON) Max 150mΩ @ VGS = 4.5V 185mΩ @ VGS = 2.5V ID Max TA = +25°C 2.0A 1.8A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Power Management Functions  Backlighting X2-DFN1310-6 (Type B) D1 DMN1150UFL3 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Footprint of just 1.3 mm2  Ultra-Low Profile Package – 0.35mm Profile  Low Gate Threshold Voltage  Fast Switching Speed  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: X2-DFN1310-6 (Type B)  Case Material: Molded Plastic, “Green” Molding Compound. UL ...