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N-CHANNEL MOSFET. DMN2008LFU Datasheet

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N-CHANNEL MOSFET. DMN2008LFU Datasheet






DMN2008LFU MOSFET. Datasheet pdf. Equivalent




DMN2008LFU MOSFET. Datasheet pdf. Equivalent





Part

DMN2008LFU

Description

DUAL N-CHANNEL MOSFET



Feature


Product Summary BVDSS 20V RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4. 0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V ID TA = +25 °C 14.5A 13.5A 13.0A 12.0A 10.5A Desc ription This new generation MOSFET is d esigned to minimize the on-state resist ance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power man.
Manufacture

Diodes

Datasheet
Download DMN2008LFU Datasheet


Diodes DMN2008LFU

DMN2008LFU; agement applications. Applications Powe r Management Functions Battery Pack L oad Switch DMN2008LFU DUAL N-CHANNEL E NHANCEMENT MODE MOSFET Features Low On -Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lea d-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Gre en” Device (Note 3) .


Diodes DMN2008LFU

Mechanical Data Case: U-DFN2030-6 (Type B) Case Material: Molded Plastic, ― Green‖ Molding Compound. UL Flammabil ity Classification Rating 94V-0 Moistu re Sensitivity: Level 1 per J-STD-020 Termina .


Diodes DMN2008LFU

.

Part

DMN2008LFU

Description

DUAL N-CHANNEL MOSFET



Feature


Product Summary BVDSS 20V RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4. 0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V ID TA = +25 °C 14.5A 13.5A 13.0A 12.0A 10.5A Desc ription This new generation MOSFET is d esigned to minimize the on-state resist ance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power man.
Manufacture

Diodes

Datasheet
Download DMN2008LFU Datasheet




 DMN2008LFU
Product Summary
BVDSS
20V
RDS(ON) Max
5.4m@ VGS = 4.5V
6.2m@ VGS = 4.0V
6.4m@ VGS = 3.7V
7.5m@ VGS = 3.1V
9.6m@ VGS = 2.5V
ID
TA = +25°C
14.5A
13.5A
13.0A
12.0A
10.5A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) , yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
Battery Pack
Load Switch
DMN2008LFU
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2030-6 (Type B)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram Below
Weight: 0.012 grams (Approximate)
U-DFN2030-6 (Type B)
D1 D2
G1 G2
ESD PROTECTED
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Bottom View
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2008LFU-7
DMN2008LFU-13
Case
U-DFN2030-6 (Type B)
U-DFN2030-6 (Type B)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http:// www.diodes.com/products/packages.html.
Marking Information
DMN2008LFU
Document number: DS38625 Rev. 4 - 2
N28
N28 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 for 2016)
WW = Week Code (01 to 53)
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 DMN2008LFU
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMN2008LFU
Value
20
±12
14.5
11.5
2.2
75
10
20
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RΘJA
PD
RΘJA
RΘJC
TJ, TSTG
Value
1.0
123
1.7
73
12
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Min
20
0.5
RDS(ON)
VSD
CISS
COSS
CRSS
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
4.7
4.8
4.9
5.1
5.7
0.7
1,418
323
106
465
18.7
42.3
3.2
4.4
277
653
1,989
1,208
492
908
Max
1.0
±10
1.5
5.4
6.2
6.4
7.5
9.6
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 16V, VGS = 0V
μA VGS = ±9.6V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5.5A
VGS = 4.0V, ID = 5.5A
mVGS = 3.7V, ID = 5.5A
VGS = 3.1V, ID = 5.5A
VGS = 2.5V, ID = 5.5A
V VGS = 0V, IS = 11A
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 16V, ID = 11A,
nC
ns
ns VDD = 16V, ID = 5.5A,
ns VGS = 4.5V, Rg = 6
ns
ns
nC
IF =11 A, di/dt = 100A/μs
DMN2008LFU
Document number: DS38625 Rev. 4 - 2
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© Diodes Incorporated




 DMN2008LFU
30.0
25.0
20.0
15.0
10.0
VGS=2.0V
VGS = 2.5V
VGS = 3.1V
VGS = 3.7V
VGS = 4.0V
VGS = 4.5V
VGS =1.5V
5.0
0.0
0
VGS = 1.3V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
7
6.5 VGS = 2.5V
6 VGS = 3.1V
5.5 VGS = 3.7V
5 VGS = 4.0V VGS = 4.5V
4.5
4
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
10
VGS = 4.5V
TJ = 150
8
TJ = 125
6 TJ = 85
TJ = 25
4
TJ = -55
2
0 5 10 15 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
5
VDS = 10V
4
DMN2008LFU
3
2
1
0
0
20
18
16
14
12
10
8
6
4
2
0
0
TJ=150
TJ=125
TJ=85
TJ=25
TJ=-55
0.5 1 1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
ID = 5.5A
2 4 6 8 10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
2
1.5 VGS = 4.5V, ID = 5.5A
1
VGS = 2.5V, ID = 5.5A
0.5
0
-50 -25 0 25 50 75 100 125
Figure 6T.JO, JnU-RNeCsTisIOtaNncTeEVMaPriaEtRioAnTwUitRhEJu(nc)tion
Temperature
150
DMN2008LFU
Document number: DS38625 Rev. 4 - 2
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