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N-CHANNEL MOSFET. DMN2400UFB Datasheet

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N-CHANNEL MOSFET. DMN2400UFB Datasheet






DMN2400UFB MOSFET. Datasheet pdf. Equivalent




DMN2400UFB MOSFET. Datasheet pdf. Equivalent





Part

DMN2400UFB

Description

N-CHANNEL MOSFET



Feature


Product Summary V(BR)DSS 20V RDS(ON) m ax 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.63A Description and Applications This MOSFE T is designed to minimize the on-state resistance (RDS(on)) and yet maintain s uperior switching performance, making i t ideal for high-efficiency power-manag ement applications. Battery Charging Power Management Functi.
Manufacture

Diodes

Datasheet
Download DMN2400UFB Datasheet


Diodes DMN2400UFB

DMN2400UFB; ons DC-DC Converters Portable Power Ad aptors X1-DFN1006-3 DMN2400UFB N-CHANN EL ENHANCEMENT MODE MOSFET Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitanc e Fast Switching Speed Low Input/Outp ut Leakage Ultra-Small Surface Mount P ackage ESD Protected up to 1.5kV Tota lly Lead-Free & Fully RoHS Compliant (N otes 1 & 2) Halog.


Diodes DMN2400UFB

en and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standa rds for High Reliability Mechanical Dat a Case: X1-DFN1006-3 Case Material: M olded Plastic, "Green" Molding Compound ; UL Flamma .


Diodes DMN2400UFB

.

Part

DMN2400UFB

Description

N-CHANNEL MOSFET



Feature


Product Summary V(BR)DSS 20V RDS(ON) m ax 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.63A Description and Applications This MOSFE T is designed to minimize the on-state resistance (RDS(on)) and yet maintain s uperior switching performance, making i t ideal for high-efficiency power-manag ement applications. Battery Charging Power Management Functi.
Manufacture

Diodes

Datasheet
Download DMN2400UFB Datasheet




 DMN2400UFB
Product Summary
V(BR)DSS
20V
RDS(ON) max
0.55Ω @ VGS = 4.5V
0.75Ω @ VGS = 2.5V
ID max
TA = +25°C
0.75A
0.63A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power-management applications.
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
X1-DFN1006-3
DMN2400UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected up to 1.5kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: Collector Dot
Terminals: Finish NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
Drain
ESD PROTECTED TO 1.5kV
Bottom View
S
D
G
Top View
Package Pin Configuration
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMN2400UFB-7
X1-DFN1006-3
3,000/Tape & Reel
DMN2400UFB-7B
X1-DFN1006-3
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN2400UFB
Document number: DS31963 Rev. 6 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated




 DMN2400UFB
Marking Information
DMN2400UFB-7
DMN2400UFB
NB
From date code 1527 (YYWW),
this changes to:
NB
Top View
Dot Denotes Drain Side
Top View
Bar Denotes Gate and Source Side
DMN2400UFB-7B
NB
Top View
Bar Denotes Gate and Source Side
NB = Part Marking Code
DMN2400UFB
Document number: DS31963 Rev. 6 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated




 DMN2400UFB
DMN2400UFB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
TA = +25°C
TA = +85°C
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
ID
IDM
Value
20
±12
0.75
0.55
0.63
0.45
3
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
0.47
258
-55 to +150
Units
V
V
A
A
A
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
TJ = +25°C
BVDSS
IDSS
IGSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
1.0
0.7
36.0
5.7
4.2
0.5
0.07
0.1
4.11
3.82
14.8
9.6
Max
-
100
±1.0
±50
0.9
0.55
0.75
0.9
-
1.2
-
-
-
-
-
-
-
-
-
-
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250μA
nA VDS = 20V, VGS = 0V
µA VGS = ±4.5V, VDS = 0V
µA VGS = ±10V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
S VDS = 10V, ID = 400mA
V VGS = 0V, IS = 150mA
pF
pF
VDS = 16V, VGS = 0V,
f = 1.0MHz
pF
nC
nC VGS =4.5V, VDS = 10V,
nC ID = 250mA
ns
ns
ns
ns
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ID = 200mA
DMN2400UFB
Document number: DS31963 Rev. 6 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated



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