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N-CHANNEL MOSFET. DMN3016LDV Datasheet

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N-CHANNEL MOSFET. DMN3016LDV Datasheet






DMN3016LDV MOSFET. Datasheet pdf. Equivalent




DMN3016LDV MOSFET. Datasheet pdf. Equivalent





Part

DMN3016LDV

Description

DUAL N-CHANNEL MOSFET



Feature


ADVANCED INFORMATION DMN3016LDV DUAL 30 V N-CHANNEL ENHANCEMENT MODE MOSFET POW ERDI Product Summary BVDSS 30V RDS(O N) max 12mΩ @ VGS = 10V 17mΩ @ VGS = 4.5V ID max TC = +25°C 21A 18A Des cription This new generation MOSFET is designed to minimize the on-state resis tance (RDS(ON)) and yet maintain superi or switching performance, making it ide al for high efficiency .
Manufacture

Diodes

Datasheet
Download DMN3016LDV Datasheet


Diodes DMN3016LDV

DMN3016LDV; power management applications. Applicat ions Power Management Functions Analo g Switch PowerDI3333-8 (Type UXC) Fea tures Low On-Resistance Low Input Cap acitance Fast Switching Speed Low Inp ut/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal ogen and Antimony Free. “Green” Dev ice (Note 3) Mechanical Data Case: Pow erDI3333-8 (Type UXC) .


Diodes DMN3016LDV

Case Material: Molded Plastic, “Green ” Molding Compound. UL Flammability C lassification Rating 94V-0 Moisture Se nsitivity: Level 1 per J-STD-020 Termi nal Connections Indicator: See Diagram Terminals: Fini .


Diodes DMN3016LDV

.

Part

DMN3016LDV

Description

DUAL N-CHANNEL MOSFET



Feature


ADVANCED INFORMATION DMN3016LDV DUAL 30 V N-CHANNEL ENHANCEMENT MODE MOSFET POW ERDI Product Summary BVDSS 30V RDS(O N) max 12mΩ @ VGS = 10V 17mΩ @ VGS = 4.5V ID max TC = +25°C 21A 18A Des cription This new generation MOSFET is designed to minimize the on-state resis tance (RDS(ON)) and yet maintain superi or switching performance, making it ide al for high efficiency .
Manufacture

Diodes

Datasheet
Download DMN3016LDV Datasheet




 DMN3016LDV
DMN3016LDV
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BVDSS
30V
RDS(ON) max
12m@ VGS = 10V
17m@ VGS = 4.5V
ID max
TC = +25°C
21A
18A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
Analog Switch
PowerDI3333-8 (Type UXC)
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: PowerDI3333-8 (Type UXC)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
D1
D1
D2
D2
D1 D2
Top View
S1
G1
S2
G2 PIN1
G1
Bottom View
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN3016LDV-7
DMN3016LDV-13
Case
PowerDI3333-8 (Type UXC)
PowerDI3333-8 (Type UXC)
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SCD606
SD6 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 for 2016)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMN3016LDV
Document number: DS38744 Rev. 2 - 2
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated




 DMN3016LDV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 7)
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (380μs pulse, Duty cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 8)
Avalanche Energy (L = 0.1mH) (Note 8)
Steady
State
TC = +25°C
TC = +70°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
DMN3016LDV
Value
30
±20
21
17
70
22
24
Unit
V
V
A
A
A
A
mJ
Value
0.9
134
78
1.8
70
41
15
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
30
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
9.5
14
0.70
1184
137
107
3.0
9.5
21
3.8
4.1
4.5
3.3
14
3.6
9.3
2.5
Max
-
1
±100
2.0
12
17
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 7A
VGS = 4.5V, ID = 7A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 15V, ID = 12A
ns
VDD = 15V, VGS = 10V,
RL = 1.5Ω, RG = 3Ω
ns
nC
IF = 12A, di/dt = 500A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMN3016LDV
Document number: DS38744 Rev. 2 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated




 DMN3016LDV
30.0
25.0
20.0
VGS = 4.0V
VGS = 4.5V
VGS = 3.5V
30
VDS = 5.0V
25
20
DMN3016LDV
15.0
10.0
5.0
VGS = 10V
VGS = 3.0V
VGS = 2.5V
0.0
0
20.00
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
18.00
16.00
14.00
VGS = 4.5V
12.00
10.00
8.00
6.00
VGS = 10V
4.00
2.00
0.00
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0.02
VGS = 10V
TJ = 150oC
0.015
0.01
TJ = 125oC
TJ = 85oC
TJ = 25oC
0.005
TJ = -55oC
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
15
10
5
0
0
100
90
80
70
60
50
40
30
20
10
0
2
2
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
1234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
ID = 12A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
1.8
1.6
1.4
VGS = 4.5V, ID = 5A
1.2
1
0.8 VGS = 10V, ID = 10A
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
PowerDI is a registered trademark of Diodes Incorporated.
DMN3016LDV
Document number: DS38744 Rev. 2 - 2
3 of 7
www.diodes.com
July 2016
© Diodes Incorporated



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