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N-CHANNEL MOSFET. DMN3026LVTQ Datasheet

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N-CHANNEL MOSFET. DMN3026LVTQ Datasheet






DMN3026LVTQ MOSFET. Datasheet pdf. Equivalent




DMN3026LVTQ MOSFET. Datasheet pdf. Equivalent





Part

DMN3026LVTQ

Description

N-CHANNEL MOSFET



Feature


ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMN3026LVTQ 30V N-CHANNEL ENHANCEMENT M ODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 23mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V ID TA = +25°C 6.6A 5.8A Description This new generation MOSFET is designed to minimize the on-state r esistance (RDS(ON)), yet maintain super ior switching performance, making it id eal for high-efficiency.
Manufacture

Diodes

Datasheet
Download DMN3026LVTQ Datasheet


Diodes DMN3026LVTQ

DMN3026LVTQ; power management applications. Feature s and Benefits Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compli ant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qua lified to AEC-Q101 Standards for High R eliability PPAP Capable (Note 4) Appl ications DC-DC Converters Power manag ement functions Backl.


Diodes DMN3026LVTQ

ighting Mechanical Data TSOT26 C ase: TSOT26 Case Material: Molded Plast ic, “Green” Molding Compound; UL Fl ammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD -020 Termi .


Diodes DMN3026LVTQ

.

Part

DMN3026LVTQ

Description

N-CHANNEL MOSFET



Feature


ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMN3026LVTQ 30V N-CHANNEL ENHANCEMENT M ODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 23mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V ID TA = +25°C 6.6A 5.8A Description This new generation MOSFET is designed to minimize the on-state r esistance (RDS(ON)), yet maintain super ior switching performance, making it id eal for high-efficiency.
Manufacture

Diodes

Datasheet
Download DMN3026LVTQ Datasheet




 DMN3026LVTQ
DMN3026LVTQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
30V
RDS(ON) Max
23m@ VGS = 10V
30m@ VGS = 4.5V
ID
TA = +25°C
6.6A
5.8A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
DC-DC Converters
Power management functions
Backlighting
Mechanical Data
TSOT26
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
Top View
D1
D2
6D
5D
G3
4S
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMN3026LVTQ-7
DMN3026LVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
1 of 8
www.diodes.com
August 2015
© Diodes Incorporated




 DMN3026LVTQ
Marking Information
DMN3026LVTQ
N5L
N5L = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2014
B
Mar
3
2015
C
2016
D
2017
E
2018
F
Apr May Jun
456
Jul Aug
78
2019
G
Sep
9
2020
H
Oct
O
2021
I
Nov
N
2022
J
Dec
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = 10V
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
30
±20
6.6
5.3
8.5
6.8
3.0
35
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
0.8
100
60
1.5
1.0
83
50
14.5
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
2 of 8
www.diodes.com
August 2015
© Diodes Incorporated




 DMN3026LVTQ
DMN3026LVTQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
30

1.0





Typ

1.5
19
22
0.7
643
65
49
2.5
5.7
12.5
1.7
1.8
2.2
2.5
12.1
3.0
6.5
1.7
Max
1.0
100
2.0
23
30
1.2





Unit
V
µA
nA
V
m
V
pF
nC
nS
nS
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6.5A
VGS = 4.5V, ID = 6.0A
VGS = 0V, IS = 1.0A
VDS = 15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 15V, ID = 4.0A
VGS = 10V, VDD = 15V, RG = 6.0,
ID= 6.5A
IF = 6.5A, dI/dt = 100A/μs
IF = 6.5A, dI/dt = 100A/μs
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
3 of 8
www.diodes.com
August 2015
© Diodes Incorporated



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