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N-CHANNEL MOSFET. DMN3032LFDBQ Datasheet

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N-CHANNEL MOSFET. DMN3032LFDBQ Datasheet






DMN3032LFDBQ MOSFET. Datasheet pdf. Equivalent




DMN3032LFDBQ MOSFET. Datasheet pdf. Equivalent





Part

DMN3032LFDBQ

Description

DUAL N-CHANNEL MOSFET



Feature


DMN3032LFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) Max 30mΩ @ VGS = 10V 42m Ω @ VGS = 4.5V ID Max TA = +25°C 6. 2A 5.2A Features and Benefits 100% Un clamped Inductive Switching – Ensures More Reliable and Robust Application Low On-Resistance – Minimizes Power L osses Low Gate Charge – Minimizes Sw itching Losses Small Form Fa.
Manufacture

Diodes

Datasheet
Download DMN3032LFDBQ Datasheet


Diodes DMN3032LFDBQ

DMN3032LFDBQ; ctor Low Profile Package – Increased P ower Density Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device ( Note 3) Qualified to AEC-Q101 Standard s for High Reliability PPAP Capable (N ote 4) Description and Applications M echanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications..


Diodes DMN3032LFDBQ

It is qualified to AEC-Q101, supported by a PPAP and ideal for use in: Body C ontrol Electronics Power Management Fu nctions DC-DC Converters Case: U-DFN 2020-6 Case Material: Molded Plastic, “Green .


Diodes DMN3032LFDBQ

.

Part

DMN3032LFDBQ

Description

DUAL N-CHANNEL MOSFET



Feature


DMN3032LFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) Max 30mΩ @ VGS = 10V 42m Ω @ VGS = 4.5V ID Max TA = +25°C 6. 2A 5.2A Features and Benefits 100% Un clamped Inductive Switching – Ensures More Reliable and Robust Application Low On-Resistance – Minimizes Power L osses Low Gate Charge – Minimizes Sw itching Losses Small Form Fa.
Manufacture

Diodes

Datasheet
Download DMN3032LFDBQ Datasheet




 DMN3032LFDBQ
DMN3032LFDBQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) Max
30mΩ @ VGS = 10V
42mΩ @ VGS = 4.5V
ID Max
TA = +25°C
6.2A
5.2A
Features and Benefits
100% Unclamped Inductive Switching Ensures More Reliable
and Robust Application
Low On-Resistance Minimizes Power Losses
Low Gate Charge Minimizes Switching Losses
Small Form Factor Low Profile Package Increased Power
Density
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and ideal for use in:
Body Control Electronics
Power Management Functions
DC-DC Converters
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
D1 D2
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
Ordering Information (Notes 4 & 5)
G1 G2
S1
Internal Schematic
S2
Notes:
Part Number
DMN3032LFDBQ-7
DMN3032LFDBQ-13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
N5 = Product Type Marking Code
N5 YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
1 of 7
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
October 2015
© Diodes Incorporated




 DMN3032LFDBQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
TA = +25°C
TA = +75°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMN3032LFDBQ
Value
30
±20
6.2
5.0
2
25
12
10
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.0
127
75
1.7
72
43
9
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 10)
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
30
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
- 1.0
- 100
- ±100
1.5 2.0
25 30
30 42
0.75 1.2
500 -
52 -
44 -
2.3 -
5.0 -
10.6 -
1.3 -
1.8 -
2.2 -
2.6 -
9.7 -
2.0 -
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.8A
V VGS = 0V, IS = 1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 15V, ID = 5.8A
nC
ns
ns VDD = 15V, VGS = 10V,
ns RL = 2.6Ω, RG = 3Ω
ns
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated




 DMN3032LFDBQ
30.0
25.0
20.0
15.0
VGS=4.0V
VGS=10.0V
VGS=3.5V
VGS=4.5V
VGS=3.0V
10.0
5.0
0.0
0
VGS=2.5V
VGS=2.0V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0.05
0.04
0.03
0.02
VGS=4.5V
VGS=10V
DMN3032LFDBQ
20
18 VDS=5V
16
14
12
10
8 TA=150
6 TA=125
4 TA=85
TA=25
2 TA=-55
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.08
ID=3.6A
0.06
0.04
0.01
0
1 3 5 7 9 11 13 15 17 19 21
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.02
ID=2.8A
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.05
0.045
0.04
0.035
VGS= 10V
150
125
0.03
0.025
0.02
0.015
85
25
-55
0.01
0.005
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
1.8
1.6 VGS=10V, ID=5.0A
1.4
1.2
VGS=4.5V, ID=3.0A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated



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