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N-CHANNEL MOSFET. DMN3033LSNQ Datasheet

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N-CHANNEL MOSFET. DMN3033LSNQ Datasheet






DMN3033LSNQ MOSFET. Datasheet pdf. Equivalent




DMN3033LSNQ MOSFET. Datasheet pdf. Equivalent





Part

DMN3033LSNQ

Description

N-CHANNEL MOSFET



Feature


Product Summary BVDSS 30V RDS(on) max 30mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V ID TA = +25°C 6A 4A Description and Applications This new generation small- signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for highefficiency powe r management applications. Motor Contr ol Backlighting DC-DC Converters Pow er Management Functions.
Manufacture

Diodes

Datasheet
Download DMN3033LSNQ Datasheet


Diodes DMN3033LSNQ

DMN3033LSNQ; DMN3033LSNQ N-CHANNEL ENHANCEMENT MODE MOSFET Features Low Gate Charge Low RDS(ON) Low Input/Output Leakage Tota lly Lead-Free & Fully RoHS Compliant (N otes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliabi lity PPAP (Note 4) Mechanical Data Ca se: SC-59 Case Material - Molded Plast ic, “Green” Molding Co.


Diodes DMN3033LSNQ

mpound; UL Flammability Classification R ating 94V-0 Moisture Sensitivity: Leve l 1 per J-STD-020 Terminal Finish - Ma tte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 20 8 .


Diodes DMN3033LSNQ

.

Part

DMN3033LSNQ

Description

N-CHANNEL MOSFET



Feature


Product Summary BVDSS 30V RDS(on) max 30mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V ID TA = +25°C 6A 4A Description and Applications This new generation small- signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for highefficiency powe r management applications. Motor Contr ol Backlighting DC-DC Converters Pow er Management Functions.
Manufacture

Diodes

Datasheet
Download DMN3033LSNQ Datasheet




 DMN3033LSNQ
Product Summary
BVDSS
30V
RDS(on) max
30m@ VGS = 10V
40m@ VGS = 4.5V
ID
TA = +25°C
6A
4A
Description and Applications
This new generation small-signal enhancement mode MOSFET
features low on-resistance and fast switching, making it ideal for high-
efficiency power management applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
DMN3033LSNQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low Gate Charge
Low RDS(ON)
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP (Note 4)
Mechanical Data
Case: SC-59
Case Material - Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.014 grams (Approximate)
D
SC-59
D
Top View
G
S
Equivalent Circuit
GS
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMN3033LSNQ-7
DMN3033LSNQ-13
Case
SC-59
SC-59
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
A5
A5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2007
U
Month
Code
Jan Feb
12
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
2015
C
2016
D
2017
E
Mar Apr May Jun
3456
1 of 6
www.diodes.com
2018
F
Jul
7
2019
G
2020
H
Aug Sep Oct
8 9O
2021
I
2022
J
Nov Dec
ND
June 2015
© Diodes Incorporated




 DMN3033LSNQ
DMN3033LSNQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6) Continuous
Pulsed Drain Current (Note 7)
Body-Diode Continuous Current (Note 6)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
30
20
6
5
24
2.25
Unit
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6) t ≤10s
Operating and Storage Temperature Range
PD
RJA
TJ, TSTG
Notes:
6. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.
7. Repetitive Rating, pulse width limited by junction temperature.
Value
1.4
90
-55 to +150
Unit
W
°C /W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
TJ = 25°C
(Note 9) TJ = 55°C
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
Forward Transconductance (Note 8)
Diode Forward Voltage (Note 8)
DYNAMIC PARAMETERS (Note 9)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gFS
VSD
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Ciss
Coss
Crss
Notes:
8. Test pulse width t = 300ms.
9. Guaranteed by design. Not subject to production testing.
Min
30
1.0



Typ
25
36
5
0.7
10.5
3.8
2.9
11
7
63
30
755
136
108
Max
1
5
100
2.1
30
40
1.1
Unit
Test Condition
V ID = 250µA, VGS = 0V
µA VDS = 30V, VGS = 0V
nA VDS = 0V, VGS = 20V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
S VDS = 10V, ID = 8A
V IS = 2.25A, VGS = 0V
nC VGS = 5V, VDS = 15V, ID = 6A
nC VGS = 10V, VDS = 15V, ID = 6A
nC VGS = 10V, VDS = 15V, ID = 6A
ns
ns VDD = 15V, VGS = 10V,
ns RD = 1.8, RG = 6
ns
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
pF
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
2 of 6
www.diodes.com
June 2015
© Diodes Incorporated




 DMN3033LSNQ
0.06
0.05
0.04
0.03
0.02
VGS = 4.5V
VGS = 10V
0.01
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
20
18
VDS = 5V
16 Pulsed
14
12
10
8
6
4
2
0
01
DMN3033LSNQ
2 34
1,200
1,000
f = 1 MHz
VGS = 0V
800
Ciss
600
400
200
0
0
Coss
Crss
5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
2
VGS = 10V
1.5 ID = 6A
VGS = 4.5V
ID = 5A
1
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
3 of 6
www.diodes.com
June 2015
© Diodes Incorporated



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