Document
Product Summary
BVDSS 30V
RDS(on) max
30mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V
ID TA = +25°C
6A
4A
Description and Applications
This new generation small-signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for highefficiency power management applications.
Motor Control Backlighting DC-DC Converters Power Management Functions
DMN3033LSNQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low Gate Charge Low RDS(ON) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP (Note 4)
Mechanical Data
Case: SC-59 Case Material - Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 .