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N-CHANNEL MOSFET. DMN63D8L Datasheet

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N-CHANNEL MOSFET. DMN63D8L Datasheet






DMN63D8L MOSFET. Datasheet pdf. Equivalent




DMN63D8L MOSFET. Datasheet pdf. Equivalent





Part

DMN63D8L

Description

N-CHANNEL MOSFET



Feature


NEW PRNOEDWUCPTRODUCT Product Summary V(BR)DSS 30V RDS(ON) max 2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +2 5°C 350mA 300mA Description This MOSF ET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power mana gement applications. Applications Moto r Control Power Manage.
Manufacture

Diodes

Datasheet
Download DMN63D8L Datasheet


Diodes DMN63D8L

DMN63D8L; ment Functions Backlighting SOT23 G DMN63D8L N-CHANNEL ENHANCEMENT MODE MOS FET Features and Benefits Low On-Resis tance Low Input Capacitance Fast Swit ching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Ha logen and Antimony Free. “Green” De vice (Note 3) Qualified to AEC-Q101 St andards for High Relia.


Diodes DMN63D8L

bility Mechanical Data Case: SOT23 Cas e Material: Molded Plastic, “Green” Molding Compound. UL Flammability Clas sification Rating 94V-0 Moisture Sensi tivity: Level 1 per J-STD-020 Terminal s: Finish .


Diodes DMN63D8L

.

Part

DMN63D8L

Description

N-CHANNEL MOSFET



Feature


NEW PRNOEDWUCPTRODUCT Product Summary V(BR)DSS 30V RDS(ON) max 2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +2 5°C 350mA 300mA Description This MOSF ET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power mana gement applications. Applications Moto r Control Power Manage.
Manufacture

Diodes

Datasheet
Download DMN63D8L Datasheet




 DMN63D8L
Product Summary
V(BR)DSS
30V
RDS(ON) max
2.8Ω @ VGS = 10V
3.8Ω @ VGS = 5V
ID max
TA = +25°C
350mA
300mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Backlighting
SOT23
G
DMN63D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.008 grams (Approximate)
D
D
ESD Protected Gate
Top View
Gate Protection
Diode
S
Equivalent Circuit
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN63D8L-7
DMN63D8L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MX2 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
Code
B
2015
C
Month Jan Feb
Code
1
2
DMN63D8L
Document number: DS38026 Rev. 1 - 2
2016
D
Mar
3
2017
E
Apr
4
2018
F
2019
G
2020
H
May Jun
56
Jul
7
1 of 6
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2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
2025
M
Nov Dec
ND
August 2015
© Diodes Incorporated




 DMN63D8L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady TA = +25°C
Continuous Drain Current (Note 6) VGS = 10V
State
t<5s
TA = +70°C
TA = +25°C
TA = +70°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
Symbol
VDSS
VGSS
ID
ID
IDM
DMN63D8L
Value
30
±20
350
280
400
310
1.2
Unit
V
V
mA
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
350
359
520
243
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
30
VGS(TH)
RDS(ON)
gFS
VSD
0.8



80
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF




Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Typ Max Unit
Test Condition
  V VGS = 0V, ID = 250A
1.0 µA VDS = 30V, VGS = 0V
±10.0 µA VGS = ±20V, VDS = 0V
1.5 V VDS = VGS, ID = 250A
2.8
VGS = 10.0V, ID = 250mA
3.8
VGS = 5.0V, ID = 250mA
4.2 VGS = 4.5V, ID = 250mA
4.5
VGS = 4.0V, ID = 250mA
13
VGS = 2.5V, ID = 10mA
  mS VDS = 10V, ID = 0.115A
0.81.2V VGS = 0V, IS = 115mA
23.2
3.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz
2.2
79.9   VDS = 0V, VGS = 0V, f = 1.0MHz
0.9
0.4  nC VGS = 10V, VDS = 30V,
0.1
ID = 150mA
0.2
2.3
3.9 ns VDD = 30V, ID = 0.115A, VGEN = 10V,
11.4 
RGEN = 25
16.7 
DMN63D8L
Document number: DS38026 Rev. 1 - 2
2 of 6
www.diodes.com
August 2015
© Diodes Incorporated




 DMN63D8L
DMN63D8L
0.8
0.7 VGS=10V
0.6 VGS=3.0V
0.5
VGS=4.0V
0.4 VGS=4.5V
0.3
VGS=5.0V
VGS=2.5V
0.2
0.1 VGS=2.0V
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
9
8
7
6 VGS=2.5V
5
4
VGS=4.5V
VGS=4.0V
3
2 VGS=5.0V VGS=10V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.6
VDS= 5V
0.5 -55
25
0.4
85125150
0.3
0.2
0.1
0
012345678
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
10
9
8
7
6
5
4
3
2
1
0
0
ID=250mA
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
10
9 VGS= 4.5V
8
7 150
125
6 85
5
4
3
2
1
25
-55
0
0 0.1 0.2 0.3 0.4 0.5 0.6
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
DMN63D8L
Document number: DS38026 Rev. 1 - 2
3 of 6
www.diodes.com
2.5
VGS=10V, ID=250mA
2
1.5
1 VGS=4.5V, ID=250mA
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
August 2015
© Diodes Incorporated



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