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N-CHANNEL MOSFET. ZXMN3F31DN8 Datasheet

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N-CHANNEL MOSFET. ZXMN3F31DN8 Datasheet






ZXMN3F31DN8 MOSFET. Datasheet pdf. Equivalent




ZXMN3F31DN8 MOSFET. Datasheet pdf. Equivalent





Part

ZXMN3F31DN8

Description

DUAL N-CHANNEL MOSFET



Feature


ZXMN3F31DN8 30V SO8 dual N-channel enhan cement mode MOSFET Summary V(BR)DSS 3 0 RDS(on) (Ω) 0.024 @ VGS= 10V 0.039 @ VGS= 4.5V ID (A) 7.3 5.7 Descriptio n This new generation Trench MOSFET fro m Zetex features low onresistance achie vable with 4.5V gate drive. Features Low on-resistance • 4.5V gate driv e capability Applications • DC-DC Co nverters • Power manageme.
Manufacture

Zetex Semiconductors

Datasheet
Download ZXMN3F31DN8 Datasheet


Zetex Semiconductors ZXMN3F31DN8

ZXMN3F31DN8; nt functions • Load switching • Moto r control • Back lighting Ordering i nformation DEVICE ZXMN3F31DN8TA Reel size (inches) 7 Tape width (mm) 12 G1 Quantity per reel 500 D1 S1 S1 G1 S2 G2 Device marking ZXMN 3F31D G2 D2 S 2 D1 D1 D2 D2 Issue 2 - February 2008 © Zetex Semiconductors plc 2008 1 ww w.zetex.com ZXMN3F31DN8 Absolute maxi mum ratings Parameter Dra.


Zetex Semiconductors ZXMN3F31DN8

in source voltage Gate source voltage Co ntinous Drain Current @ VGS=10; TA=25° C(b) @ VGS=10; TA=70°C(b) @ VGS=10; TA =25°C(a) Pulsed drain current(c) Conti nuous source current (body diode)(b) Pu lsed source current (body diode)(c) Pow er dissip .


Zetex Semiconductors ZXMN3F31DN8

.

Part

ZXMN3F31DN8

Description

DUAL N-CHANNEL MOSFET



Feature


ZXMN3F31DN8 30V SO8 dual N-channel enhan cement mode MOSFET Summary V(BR)DSS 3 0 RDS(on) (Ω) 0.024 @ VGS= 10V 0.039 @ VGS= 4.5V ID (A) 7.3 5.7 Descriptio n This new generation Trench MOSFET fro m Zetex features low onresistance achie vable with 4.5V gate drive. Features Low on-resistance • 4.5V gate driv e capability Applications • DC-DC Co nverters • Power manageme.
Manufacture

Zetex Semiconductors

Datasheet
Download ZXMN3F31DN8 Datasheet




 ZXMN3F31DN8
ZXMN3F31DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS
30
RDS(on) (Ω)
0.024 @ VGS= 10V
0.039 @ VGS= 4.5V
ID (A)
7.3
5.7
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
Applications
• DC-DC Converters
• Power management functions
• Load switching
• Motor control
• Back lighting
Ordering information
DEVICE
ZXMN3F31DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
G1
Quantity
per reel
500
D1
S1
S1
G1
S2
G2
Device marking
ZXMN
3F31D
G2
D2
S2
D1
D1
D2
D2
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com




 ZXMN3F31DN8
ZXMN3F31DN8
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ VGS=10; TA=25°C(b)
@ VGS=10; TA=70°C(b)
@ VGS=10; TA=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at TA =25°C(a)(d)
Linear derating factor
Power dissipation at TA =25°C(a)(e)
Linear derating factor
Power dissipation at TA =25°C(b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
30
±20
7.3
5.9
5.7
33
3.5
33
1.25
10
1.8
14
2.1
17
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)(d)
Junction to ambient(a)(e)
Junction to ambient(b)(d)
Junction to lead(f)
Symbol
RJA
RJA
RJA
RJL
Limit
100
70
60
53
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com




 ZXMN3F31DN8
Thermal characteristics
ZXMN3F31DN8
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com



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