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N-CHANNEL MOSFET. BSS138DWQ Datasheet

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N-CHANNEL MOSFET. BSS138DWQ Datasheet






BSS138DWQ MOSFET. Datasheet pdf. Equivalent




BSS138DWQ MOSFET. Datasheet pdf. Equivalent





Part

BSS138DWQ

Description

DUAL N-CHANNEL MOSFET



Feature


BSS138DWQ DUAL N-CHANNEL ENHANCEMENT MOD E FIELD EFFECT TRANSISTOR Product Summ ary V(BR)DSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA D escription This MOSFET is designed to m inimize the on-state resistance (RDS(ON )), yet maintain superior switching per formance, making it ideal for high effi ciency power management applications. A pplications Load Swi.
Manufacture

Diodes

Datasheet
Download BSS138DWQ Datasheet


Diodes BSS138DWQ

BSS138DWQ; tch SOT363 Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Tot ally Lead-Free & Fully RoHS Compliant ( Notes 1 & 2) Halogen and Antimony Free . “Green” Device (Note 3) The BSS1 38DWQ is suitable for automotive applic ations requiring specific change contro l; this part is AEC-Q101 qualified, PPA P capable, and manufac.


Diodes BSS138DWQ

tured in IATF 16949 certified facilities . https://www.diodes.com/quality/produc t-definitions/ Mechanical Data Case: S OT-363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flamma bility Classification Rating 94V-0 Moi sture Sensitivity: Level 1 per J-STD-02 0 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable pe r MIL-STD-202, Method .


Diodes BSS138DWQ

208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D2 G1 S1 Top View S2 G2 D1 Top View Intern al Schematic Ordering Information (Not e 4) Notes: Part Number Case Packag ing BSS138DWQ-7 SOT363 3,000/Tape & Reel BSS138DWQ-13 SOT363 10,000/Tape & Reel 1. No purposely added lead. Fu lly EU Directive 2002/95/EC (RoHS), 201 1/65/EU (RoHS 2) &.

Part

BSS138DWQ

Description

DUAL N-CHANNEL MOSFET



Feature


BSS138DWQ DUAL N-CHANNEL ENHANCEMENT MOD E FIELD EFFECT TRANSISTOR Product Summ ary V(BR)DSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA D escription This MOSFET is designed to m inimize the on-state resistance (RDS(ON )), yet maintain superior switching per formance, making it ideal for high effi ciency power management applications. A pplications Load Swi.
Manufacture

Diodes

Datasheet
Download BSS138DWQ Datasheet




 BSS138DWQ
BSS138DWQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS
50V
RDS(ON) Max
3.5Ω @ VGS = 10V
ID Max
TA = +25°C
200mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
SOT363
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The BSS138DWQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D2 G1 S1
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
BSS138DWQ-7
SOT363
3,000/Tape & Reel
BSS138DWQ-13
SOT363
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
KK3388 YYMM
K38 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
2006
T
Feb
2
Mar
3
2016
D
Apr
4
2017
E
2018
F
2019
G
2020
H
May
5
Jun
6
Jul Aug Sep
78
9
2021
I
Oct
O
2022
J
Nov
N
2023
K
Dec
D
BSS138DWQ
Document number: DS38849 Rev. 2 - 2
1 of 6
www.diodes.com
October 2019
© Diodes Incorporated




 BSS138DWQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 7)
Gate-Source Voltage
Drain Current (Note 5)
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
BSS138DWQ
BSS138DW
50
50
20
200
Units
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
BSS138DW
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 50 75 V VGS = 0V, ID = 250μA
IDSS   0.5 µA VDS = 50V, VGS = 0V
IGSS
  100 nA VGS = 20V, VDS = 0V
VGS(TH) 0.5 1.2 1.5
V VDS = VGS, ID = 250μA
RDS(ON)
1.4 3.5
VGS = 10V, ID = 0.22A
gFS 100   mS VDS =25V, ID = 0.2A, f = 1.0KHz
CISS
COSS
CRSS
  50 pF
  25 pF VDS = 10V, VGS = 0V, f = 1.0MHz
  8.0 pF
tD(ON)   20 ns VDD = 30V, ID = 0.2A,
tD(OFF)   20 ns RGEN = 50
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. RGS 20K.
BSS138DWQ
Document number: DS38849 Rev. 2 - 2
2 of 6
www.diodes.com
October 2019
© Diodes Incorporated




 BSS138DWQ
0.6
Tj = 25°C
0.5
0.4
0.3
0.2
0.1
VGS = 3.5V
VGS = 3.25V
VGS = 3.0V
VGS = 2.75V
VGS = 2.5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
BSS138DWQ
0.8
VDS = 1V
0.7
0.6
0.5
0.4
-55°C
25°C
150°C
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
2.45
2.25
2.05
1.85
1.65
VGS = 10V
ID = 0.5A
1.45
1.25
1.05
VGS = 4.5V
ID = 0.075A
0.85
0.65
-55
-5
45
95 145
Tj, JUNCTION TEMPERATURE ((C))
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55 -25 0 25 50 75 100 125 150
Tj, JUNCTION TEMPERATURE ((C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
VGS = 2.5V
7
6
5
150°C
25°C
4
3
-55°C
2
1
0
0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
ID, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
9
VGS = 2.75V
8
7
6
5
150°C
4
25°C
3
2
-55°C
1
0
0 0.05 0.1 0.15 0.2 0.25
ID, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
BSS138DWQ
Document number: DS38849 Rev. 2 - 2
3 of 6
www.diodes.com
October 2019
© Diodes Incorporated



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