DatasheetsPDF.com

N-CHANNEL MOSFET. DMN5010VAK Datasheet

DatasheetsPDF.com

N-CHANNEL MOSFET. DMN5010VAK Datasheet






DMN5010VAK MOSFET. Datasheet pdf. Equivalent




DMN5010VAK MOSFET. Datasheet pdf. Equivalent





Part

DMN5010VAK

Description

DUAL N-CHANNEL MOSFET



Feature


Features Dual N-Channel MOSFET Low On- Resistance Very Low Gate Threshold Vol tage, 1.0V Max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Pack age Totally Lead-Free & Fully RoHS Com pliant (Notes 1 & 2) Halogen and Antim ony Free. “Green” Device (Note 3) ESD Protected up to 2kV Qualified to A EC-Q101 Standards for .
Manufacture

Diodes

Datasheet
Download DMN5010VAK Datasheet


Diodes DMN5010VAK

DMN5010VAK; High Reliability DMN5/L06VK/L06VAK/010V AK DUAL N-CHANNEL ENHANCEMENT MODE MOSF ET Mechanical Data Case: SOT563 Case Material: Molded Plastic, ―Green‖ M olding Compound. UL Flammability Classi fication Rating 94V-0 Moisture Sensiti vity: Level 1 per J-STD-020 Terminal C onnections: See Diagram Terminals: Fin ish – Matte Tin Annealed over Copper Leadframe. Solderable pe.


Diodes DMN5010VAK

r MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D2 G1 S1 D2 S1 G 1 ESD protected up to 2kV SOT563 Top View S2 G2 D1 DMN5L06VK G2 S2 D1 DMN5 L06VAK DMN5010VAK Ordering Information (N .


Diodes DMN5010VAK

.

Part

DMN5010VAK

Description

DUAL N-CHANNEL MOSFET



Feature


Features Dual N-Channel MOSFET Low On- Resistance Very Low Gate Threshold Vol tage, 1.0V Max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Pack age Totally Lead-Free & Fully RoHS Com pliant (Notes 1 & 2) Halogen and Antim ony Free. “Green” Device (Note 3) ESD Protected up to 2kV Qualified to A EC-Q101 Standards for .
Manufacture

Diodes

Datasheet
Download DMN5010VAK Datasheet




 DMN5010VAK
Features
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected up to 2kV
Qualified to AEC-Q101 Standards for High Reliability
DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
D2 G1 S1
D2 S1 G1
ESD protected up to 2kV
SOT563
Top View
S2 G2 D1
DMN5L06VK
G2 S2 D1
DMN5L06VAK
DMN5010VAK
Ordering Information (Note 4)
Notes:
Part Number
DMN5L06VK-7
DMN5L06VK-7A
DMN5L06VK-13
DMN5L06VK-13A
DMN5L06VAK-7
DMN5L06VAK-7A
DMN5L06VAK-13
DMN5L06VAK-13A
DMN5010VAK-7
DMN5010VAK-7A
DMN5010VAK-13
DMN5010VAK-13A
Case
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
Packaging
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
1 of 7
www.diodes.com
February 2017
© Diodes Incorporated




 DMN5010VAK
Marking Information (Note 5 & 6)
DMN5L06VK-7/-13 (Note 5)
D1 G2 S2
KAB YM
S1 G1 D2
DMN5L06VK-7A/-13A (Note 6)
654
D1 G2 S2
KAB YM
S1 G1 D2
12
3
DMN5/L06VK/L06VAK/010VAK
KAB= DMN5L06VK Product Type
Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
DMN5L06VAK-7/-13 (Note 5)
DMN5010VAK-7/-13 (Note 5)
D1 S2
G2
xxx YM
G1 S1
D2
DMN5L06VAK-7A/-13A (Note 6)
DMN5010VAK-7A/-13A (Note 6)
65
D1 S2
4
G2
xxx YM
G1 S1
12
D2
3
xxx = Product Type Marking Code:
KAE or KAE or KAC
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
2006
~
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
T
~
D
E
F
G
H
I
JKL
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov
Code
1
2
3
4
5
6
7
8
9
ON
Notes: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180°rotated, or mixed (both ways).
6. Part number with suffix 7A and 13A designates devices marked with a Pin 1 indicator. There is no other difference between both devices.
2025
M
Dec
D
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
2 of 7
www.diodes.com
February 2017
© Diodes Incorporated




 DMN5010VAK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Drain-Gate Voltage RGS 1.0M
Gate-Source Voltage
Drain Current (Note 7)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VDGR
VGSS
ID
IDM
DMN5/L06VK/L06VAK/010VAK
Value
50
50
20
40
280
1.5
Unit
V
V
V
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-55 to +150
Unit
mW
C/W
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol Min
@ TC = +25°C
BVDSS
IDSS
50
Typ
Gate-Body Leakage
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
@TJ = +25°C
@TJ = +0°C to +85°C (Note 9)
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
0.49
0.30
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ID(ON)
|Yfs|
VSD
Ciss
Coss
Crss
0.5
200
0.5
1.4
Notes:
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Max
60
1
500
50
1.0
1.2
3.0
2.5
2.0
1.4
50
25
5.0
Unit
Test Condition
V VGS = 0V, ID = 10µA
nA VDS = 50V, VGS = 0V
µA VGS = ±12V, VDS = 0V
nA VGS = ±10V, VDS = 0V
nA VGS = ±5V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
A VGS = 10V, VDS = 7.5V
mS VDS =10V, ID = 0.2A
V VGS = 0V, IS = 115mA
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
pF
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
3 of 7
www.diodes.com
February 2017
© Diodes Incorporated



Recommended third-party DMN5010VAK Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)