N-CHANNEL MOSFET
NOT RECOMMENDED FOR NEW DESIGN CONTACT US
DMN61D9UW
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRNOEDWUCPTRODUCT
Product ...
Description
NOT RECOMMENDED FOR NEW DESIGN CONTACT US
DMN61D9UW
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 60V
RDS(ON) max
2Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V
ID max TA = +25°C
340mA 300mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (DMN61D9UWQ)
Applications
Motor controls Power management functions backlighting
Mechanical Data
Package: SOT323 Package Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate)
D
SOT323
D
G
ESD protected up to 2kV
Top View
Gate Protection Diode
S
Equivalent Circuit
G
S
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN61D9UW-7 DMN61D9UW-13
Package
SOT323 ...
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