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N-CHANNEL MOSFET. DMN62D0LFD Datasheet

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N-CHANNEL MOSFET. DMN62D0LFD Datasheet






DMN62D0LFD MOSFET. Datasheet pdf. Equivalent




DMN62D0LFD MOSFET. Datasheet pdf. Equivalent





Part

DMN62D0LFD

Description

N-CHANNEL MOSFET



Feature


ANDEVNAWENPWCREPOIRDNOUFDCOUTRC TM A T I O N Product Summary V(BR)DSS 60V RD S(ON) 2Ω @ VGS = 4V 2.5Ω @ VGS = 2. 5V ID TA = +25°C 310mA 295mA Descrip tion This new generation MOSFET has bee n designed to minimize the onstate resi stance (RDS(ON)) and yet maintain super ior switching performance, making it id eal for high efficiency power managemen t applications. Applic.
Manufacture

Diodes

Datasheet
Download DMN62D0LFD Datasheet


Diodes DMN62D0LFD

DMN62D0LFD; ations • DC-DC Converters • Power ma nagement functions • Battery Operated Systems and Solid-State Relays • Dri vers: Relays, Solenoids, Lamps, Hammers , Displays, Memories, Transistors, etc. DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Low O n-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/ Output Leakage • ESD Protected • T.


Diodes DMN62D0LFD

otally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Q ualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: X1-DFN1212-3 • Case Material: Molded .


Diodes DMN62D0LFD

.

Part

DMN62D0LFD

Description

N-CHANNEL MOSFET



Feature


ANDEVNAWENPWCREPOIRDNOUFDCOUTRC TM A T I O N Product Summary V(BR)DSS 60V RD S(ON) 2Ω @ VGS = 4V 2.5Ω @ VGS = 2. 5V ID TA = +25°C 310mA 295mA Descrip tion This new generation MOSFET has bee n designed to minimize the onstate resi stance (RDS(ON)) and yet maintain super ior switching performance, making it id eal for high efficiency power managemen t applications. Applic.
Manufacture

Diodes

Datasheet
Download DMN62D0LFD Datasheet




 DMN62D0LFD
Product Summary
V(BR)DSS
60V
RDS(ON)
2@ VGS = 4V
2.5@ VGS = 2.5V
ID
TA = +25°C
310mA
295mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
DMN62D0LFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1212-3
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208 e4
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
Drain
ESD PROTECTED
Top View
G pin
Bottom View
S
D
G
Pin-Out Top View
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN62D0LFD-7
DMN62D0LFD-13
Compliance
Standard
Standard
Case
X1-DFN1212-3
X1-DFN1212-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K63
YM
K63 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
2007
Code
U
2008
V
Month Jan Feb
Code
1
2
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
2009
W
Mar
3
2010
X
Apr
4
2011
Y
2012
Z
2013
A
May Jun
56
Jul Aug
78
1 of 6
www.diodes.com
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
May 2014
© Diodes Incorporated




 DMN62D0LFD
DMN62D0LFD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.0V
Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
Value
60
±20
310
260
1.0
Unit
V
V
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Max
0.48
265
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Symbol
BVDSS
IDSS
Min
60
Typ
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
0.6
1.3
1.4
1.8
2.4
1.8
0.8
31
4.3
3.0
99
0.5
0.09
0.07
2.6
2.1
18
8.7
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
1.0
±100
±500
±2.0
1.0
2
2.5
3
1.3
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 60V, VGS = 0V
nA VGS = ±5V, VDS = 0V
nA VGS = ±10V, VDS = 0V
μA VGS = ±15V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 50mA
VGS = 1.5V, ID = 10mA
S VDS = 10V, ID = 200mA
V VGS = 0V, IS = 115mA
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
ns
ns VGS = 10V, VDS = 30V,
ns
RL = 150, RG = 25,
ID = 200mA
ns
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated




 DMN62D0LFD
DMN62D0LFD
0.5
VGS = 10V
VGS = 4.5V
0.4
VGS = 4.0V
VGS = 3.5V
0.3
VGS = 3.0V
VGS = 2.5V
0.2
VGS = 2.0V
0.1
VGS = 1.5V
0.0
0
VGS = 1.2V
0.5 1.0 1.5 2.0 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3.0
2.5
2.3
2.1
VGS = 2.5V
1.9
1.7
VGS = 4.5V
1.5
1.3
VGS = 10V
1.1
0.9
0.7
0.5
0
0.1 0.2 0.3 0.4
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.5
2.4
0.5
VDS = 5.0V
0.4
0.3
0.2 TA = 150°C
TA = 85°C
0.1
TA = 125°C
TA = 25°C
TA = -55°C
00 0.5 1.0 1.5 2.0 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3.0
VGS = 4.5V
2.5
TA = 150°C
TA = 125°C
2.0
TA = 85°C
1.5
TA = 25°C
1.0
0.5 TA = -55°C
0
0
3.0
0.1 0.2 0.3 0.4
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.5
2.0
VGS = 4V
ID = 200mA
2.5
VGS = 2.5V
ID = 100mA
2.0
1.6 VGS = 4V
1.5 ID = 200mA
1.2
VGS = 2.5V
ID = 100mA
1.0
0.8 0.5
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated



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