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N-CHANNEL MOSFET. DMN63D1LW Datasheet

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N-CHANNEL MOSFET. DMN63D1LW Datasheet






DMN63D1LW MOSFET. Datasheet pdf. Equivalent




DMN63D1LW MOSFET. Datasheet pdf. Equivalent





Part

DMN63D1LW

Description

N-CHANNEL MOSFET



Feature


A D VNA EN CWEPDRINONEDFWUOCRPTRMOADT IU OCNT Product Summary V(BR)DSS 60V RD S(ON) max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA De scription This MOSFET is designed to mi nimize the on-state resistance (RDS(ON) ) and yet maintain superior switching p erformance, making it ideal for high ef ficiency power management applications. Applications Motor Co.
Manufacture

Diodes

Datasheet
Download DMN63D1LW Datasheet


Diodes DMN63D1LW

DMN63D1LW; ntrol Power Management Functions Backl ighting SOT323 G DMN63D1LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and B enefits Low On-Resistance Low Input C apacitance Fast Switching Speed Low I nput/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compli ant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qua lified to AEC-Q101 Sta.


Diodes DMN63D1LW

ndards for High Reliability Mechanical D ata Case: SOT323 Case Material: Molde d Plastic, “Green” Molding Compound . UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 p er J-STD-020 .


Diodes DMN63D1LW

.

Part

DMN63D1LW

Description

N-CHANNEL MOSFET



Feature


A D VNA EN CWEPDRINONEDFWUOCRPTRMOADT IU OCNT Product Summary V(BR)DSS 60V RD S(ON) max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA De scription This MOSFET is designed to mi nimize the on-state resistance (RDS(ON) ) and yet maintain superior switching p erformance, making it ideal for high ef ficiency power management applications. Applications Motor Co.
Manufacture

Diodes

Datasheet
Download DMN63D1LW Datasheet




 DMN63D1LW
Product Summary
V(BR)DSS
60V
RDS(ON) max
2Ω @ VGS = 10V
3Ω @ VGS = 5V
ID max
TA = +25°C
380mA
310mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Backlighting
SOT323
G
DMN63D1LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (Approximate)
D
D
ESD Protected Gate
Top View
Gate Protection
Diode
S
Equivalent Circuit
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN63D1LW-7
DMN63D1LW-13
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D36
D36 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
Code
B
Month
Code
Jan
1
2015
C
Feb
2
2016
D
Mar
3
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
1 of 6
www.diodes.com
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
September 2015
© Diodes Incorporated




 DMN63D1LW
DMN63D1LW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<5s
Maximum Continuous Body Diode Forward Current (Note 6)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
60
±20
380
300
430
340
0.5
1.2
Unit
V
V
mA
mA
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
t<5s
Steady State
t<5s
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
310
411
371
410
311
257
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(TH) 1.0
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
80
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Typ
1.6
0.75
30
4.2
2.9
133
304
203
84
3.9
3.4
15.7
9.9
Max
1.0
±10
2.5
2.0
3.0
1.1
Unit
Test Condition
V VGS = 0V, ID = 10µA
µA VDS = 60V, VGS = 0V
µA VGS = ±20V, VDS = 0V
V VDS = 10V, ID = 1mA
Ω VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
mS VDS = 10V, ID = 0.2A
V VGS = 0V, IS = 115mA
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
pF
Ω f = 1MHz, VGS = 0V, VDS = 0V
pC
pC VGS = 4.5V, VDS = 10V,
ID = 250mA
pC
ns
ns VDD = 30V, VGS = 10V,
ns RG = 25Ω, ID = 200mA
ns
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated




 DMN63D1LW
1.4
VGS = 10.0V
1.2
VGS = 8.0V
1.0
VGS = 6.0V
VGS = 5.0V
0.8 VGS = 4.0V
0.6
VGS = 3.0V
0.4
0.2
0.0
0
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
2
DMN63D1LW
2.5
VGS = 10.0V, ID = 300mA
2
1.5
1 VGS = 10.0V, ID = 150mA
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 2. On-Resistance Variation with Temperature
2
1.6
ID = 250µA
1.2
1.6 ID = 1mA
1.2
0.8 0.8
0.4 0.4
0
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE ()
Figure 3. Gate Threshold Variation with
Temperature
150
1
VDS = 10.0V
TA = 150oC
0.1
0
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE ()
Figure 4. Gate Threshold Variation with
Temperature
150
5
VGS = 5.0V
4
3 TA = 85oC TA = 125oC TA = 150oC
0.01
TA = 125oC
TA = 85oC
0.001
1
TA = 25oC
TA = -55oC
1.5 2 2.5 3 3.5 4 4.5
VGS, GATE SOURCE VOLTAGE (V)
Figure 5. Typical Transfer Characteristics
5
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
3 of 6
www.diodes.com
2
1
TA = -55oC
0
TA = 25oC
0.001
0.01
0.1
1
ID, DRAIN-SOURCE CURRENT (A)
Figure 6. Static Drain-Source On-Resistance vs.
Drain Current
September 2015
© Diodes Incorporated



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