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N-CHANNEL MOSFET. DMNH4005SPSQ Datasheet

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N-CHANNEL MOSFET. DMNH4005SPSQ Datasheet






DMNH4005SPSQ MOSFET. Datasheet pdf. Equivalent




DMNH4005SPSQ MOSFET. Datasheet pdf. Equivalent





Part

DMNH4005SPSQ

Description

N-CHANNEL MOSFET



Feature


DMNH4005SPSQ Green 40V N-CHANNEL 175°C MOSFET POWERDI Product Summary BVDSS 40V RDS(ON) 4.0mΩ @ VGS = 10V ID TC = +25°C 80A Description and Applicat ions This MOSFET has been designed to m eet the stringent requirements of Autom otive applications. It is qualified to AECQ101, supported by a PPAP and is ide al for use in: Engine Management Syste ms Body Control Elect.
Manufacture

Diodes

Datasheet
Download DMNH4005SPSQ Datasheet


Diodes DMNH4005SPSQ

DMNH4005SPSQ; ronics DC-DC Converters PowerDI5060-8 Features Rated to +175°C – Ideal for High Ambient Temperature Environmen ts 100% Unclamped Inductive Switching – Ensures More Reliable and Robust En d Application Low RDS(ON) – Minimise s Power Losses Low Qg – Minimises Sw itching Losses <1.1mm Package Profile – Ideal for Thin Applications Lead-F ree Finish; RoHS Compliant (N.


Diodes DMNH4005SPSQ

otes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliabil ity PPAP Capable (Note 4) Mechanical Data Case: PowerDI5060-8 Case Materi al: Mol .


Diodes DMNH4005SPSQ

.

Part

DMNH4005SPSQ

Description

N-CHANNEL MOSFET



Feature


DMNH4005SPSQ Green 40V N-CHANNEL 175°C MOSFET POWERDI Product Summary BVDSS 40V RDS(ON) 4.0mΩ @ VGS = 10V ID TC = +25°C 80A Description and Applicat ions This MOSFET has been designed to m eet the stringent requirements of Autom otive applications. It is qualified to AECQ101, supported by a PPAP and is ide al for use in: Engine Management Syste ms Body Control Elect.
Manufacture

Diodes

Datasheet
Download DMNH4005SPSQ Datasheet




 DMNH4005SPSQ
DMNH4005SPSQ
Green 40V N-CHANNEL 175°C MOSFET
POWERDI
Product Summary
BVDSS
40V
RDS(ON)
4.0mΩ @ VGS = 10V
ID
TC = +25°C
80A
Description and Applications
This MOSFET has been designed to meet the stringent requirements
of Automotive applications. It is qualified to AECQ101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
PowerDI5060-8
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimises Power Losses
Low Qg Minimises Switching Losses
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D
S
D
Pin1
SD
SD
G
GD
Top View
Bottom View
S
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMNH4005SPSQ-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H4005SS
YY WW
= Manufacturers Marking
H4005SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
S S SG
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4005SPSQ
Document number: DS38860 Rev. 1 - 2
1 of 7
www.diodes.com
September 2016
© Diodes Incorporated




 DMNH4005SPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8) L=1mH
Avalanche Energy (Note 8) L=1mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH4005SPSQ
Value
40
20
80
60
90
80
30
445
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.6
98
54
2.8
53
29
0.9
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
1
Typ
3.2
2847
743
243
2.0
48
23
9.5
11.5
6.6
12.1
18.3
4.9
29
24
Max
1
±100
3
4.0
1.2
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 32V, VGS = 0V
nA VGS = 16V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 20A
V VGS = 0V, IS = 1A
pF
VDS = 20V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDD = 20V, ID = 20A
ns VDD = 20V, VGS = 10V,
Rg = 1, ID = 20A
ns
nC IF = 15A, di/dt = 100A/µs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4005SPSQ
Document number: DS38860 Rev. 1 - 2
2 of 7
www.diodes.com
September 2016
© Diodes Incorporated




 DMNH4005SPSQ
50.0
40.0
30.0
20.0
VGS=10.0V
VGS=5.0V
VGS=4.5V
VGS=4.0V
10.0
VGS=3.5V
0.0
0
VGS=3.0V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0.004
30
VDS=5V
25
DMNH4005SPSQ
20
15
10
5
0
1
0.06
175
150
125
85
25
-55
2345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
0.0035
0.05
0.003
0.0025
VGS=10.0V
0.04
0.03
0.002
0.0015
0.02
0.01
ID=20A
0.001
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.008
VGS=10V
0.006
175
150
0
0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2
1.8
1.6
0.004
0.002
125
85
25
-55
1.4
1.2
1 VGS=10V, ID=20A
0.8
0 0.6
1 6 11 16 21 26 31
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4005SPSQ
Document number: DS38860 Rev. 1 - 2
3 of 7
www.diodes.com
September 2016
© Diodes Incorporated



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