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N-CHANNEL MOSFET. DMNH4015SSD Datasheet

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N-CHANNEL MOSFET. DMNH4015SSD Datasheet






DMNH4015SSD MOSFET. Datasheet pdf. Equivalent




DMNH4015SSD MOSFET. Datasheet pdf. Equivalent





Part

DMNH4015SSD

Description

DUAL N-CHANNEL MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMNH4015SSD Datasheet


Diodes DMNH4015SSD

DMNH4015SSD; .


Diodes DMNH4015SSD

.


Diodes DMNH4015SSD

.

Part

DMNH4015SSD

Description

DUAL N-CHANNEL MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMNH4015SSD Datasheet




 DMNH4015SSD
DMNH4015SSD
40V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
40V
RDS(ON) Max
15mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
ID
TA = +25°C
8.6A
7.5A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Data Sheet (DMNH4015SSDQ)
Applications
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
S1
D1 D1
D2
Pin1
G1 D1
S2
D2 G1
G2
G2
D2 S1
S2
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMNH4015SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
85
NH4015SD
YY WW
1
DMNH4015SSD
Document number: DS38105 Rev. 1 - 2
4
= Manufacturer’s Marking
NH4015SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
1 of 8
www.diodes.com
July 2016
© Diodes Incorporated




 DMNH4015SSD
DMNH4015SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
40
±20
8.6
6.9
11.0
8.8
2.2
80
25
33
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
Value
1.4
0.9
111
66
2.0
1.2
75
45
13
-55 to +175
Units
W
°C/W
W
°C/W
°C
DMNH4015SSD
Document number: DS38105 Rev. 1 - 2
2 of 8
www.diodes.com
July 2016
© Diodes Incorporated




 DMNH4015SSD
DMNH4015SSD
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40

1





Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Typ

10
12
0.7
1,938
156
126
1.8
15
33
4.4
5.9
4.4
10.5
12.3
5.7
11
7.6
Max
1
100
3
15
20
1.0





Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = 15V, ID = 12A
ns
VDD = 15V, VGS = 10V,
RL = 1.25, RG = 3,
ns
nC
IS = 12A, di/dt = 500A/μs
DMNH4015SSD
Document number: DS38105 Rev. 1 - 2
3 of 8
www.diodes.com
July 2016
© Diodes Incorporated



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