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N-CHANNEL MOSFET. DMTH4007SPD Datasheet

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N-CHANNEL MOSFET. DMTH4007SPD Datasheet
















DMTH4007SPD MOSFET. Datasheet pdf. Equivalent













Part

DMTH4007SPD

Description

DUAL N-CHANNEL MOSFET



Feature


ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMTH4007SPD 40V 175°C DUAL N-CHANNEL E NHANCEMENT MODE MOSFET Product Summary BVDSS 40V RDS(ON) max 8.6mΩ @ VGS = 10V ID max TC = +25°C (Note 9) 45A Description and Applications This MOSF ET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-effi.
Manufacture

Diodes

Datasheet
Download DMTH4007SPD Datasheet


Diodes DMTH4007SPD

DMTH4007SPD; ciency power management applications. B acklighting Power Management Functions DC-DC Converters Features and Benefi ts Rated to +175°C – Ideal for High Ambient Temperature Environments High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input C apacitance Fast Switching Speed Total ly Lead-Free & Fully RoHS Compliant (No tes 1 & 2) Halogen and.


Diodes DMTH4007SPD

Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards fo r High Reliability Mechanical Data Cas e: PowerDI5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Cla .


Diodes DMTH4007SPD

.





Part

DMTH4007SPD

Description

DUAL N-CHANNEL MOSFET



Feature


ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMTH4007SPD 40V 175°C DUAL N-CHANNEL E NHANCEMENT MODE MOSFET Product Summary BVDSS 40V RDS(ON) max 8.6mΩ @ VGS = 10V ID max TC = +25°C (Note 9) 45A Description and Applications This MOSF ET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-effi.
Manufacture

Diodes

Datasheet
Download DMTH4007SPD Datasheet




 DMTH4007SPD
DMTH4007SPD
40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
40V
RDS(ON) max
8.6m@ VGS = 10V
ID max
TC = +25°C
(Note 9)
45A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Top View
Pin1
Bottom View
S1
G1
S2
G2
Pin Out
Top View
D1
D1
D2
G1
D2
D1 D2
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMTH4007SPD-13
PowerDI5060-8
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
H4007SD
YY WW
= Manufacturer’s Marking
H4007SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
S1 G1 S2 G2
DMTH4007SPD
Document number: DS37359 Rev. 3 - 2
1 of 7
www.diodes.com
November 2015
© Diodes Incorporated




 DMTH4007SPD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
(Note 9)
TC = +100°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMTH4007SPD
Value
40
±20
45
38.1
14.2
11.9
90
34
20
89
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
37.5
4
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
40
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
2
Typ
7.5
0.85
2,026
702
84.8
0.46
41.9
10
11.5
7
11.5
15.6
8.8
29.9
23
Max
1
±100
4
8.6
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 17A
V VGS = 0V, IS = 17A
pF
pF VDS = 30V, VGS = 0V,
f = 1MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VDS = 30V, ID = 20A, VGS = 10V
nC
ns
ns VDD = 30V, VGS = 10V,
ns ID = 20A, RG = 3Ω
ns
nS
nC
IF = 20A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMTH4007SPD
Document number: DS37359 Rev. 3 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated




 DMTH4007SPD
50
VGS = 10V
VGS = 5.0V
40
VGS = 6.0V
30
20
VGS = 4.5V
10
00
10
VGS = 4.0V
VGS = 3.5V
0.5 1
1.5 2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
9
8
VGS = 10V
7
6
5
4
0
0.015
0.013
5 10 15 20 25 30 35 40 45
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
50
TA = 175C
TA = 150C
TA = 125C
0.011
TA = 85C
0.009
0.007
0.005
0.003
0
TA = 25C
TA = -55C
VGS = 10V
5 10 15 20 25
I D, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
DMTH4007SPD
30
VDS = 5.0V
25
20
15
10
5
0
0
50
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
12345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
45
40 ID = 17A
35
30
25
20
15
10
5
0
2
2.2
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
20
2
1.8
VGS = 10V
1.6 ID = 20A
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMTH4007SPD
Document number: DS37359 Rev. 3 - 2
3 of 7
www.diodes.com
November 2015
© Diodes Incorporated




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