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N-CHANNEL MOSFET. DMNH6042SPSQ Datasheet

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N-CHANNEL MOSFET. DMNH6042SPSQ Datasheet






DMNH6042SPSQ MOSFET. Datasheet pdf. Equivalent




DMNH6042SPSQ MOSFET. Datasheet pdf. Equivalent





Part

DMNH6042SPSQ

Description

N-CHANNEL MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMNH6042SPSQ Datasheet


Diodes DMNH6042SPSQ

DMNH6042SPSQ; .


Diodes DMNH6042SPSQ

.


Diodes DMNH6042SPSQ

.

Part

DMNH6042SPSQ

Description

N-CHANNEL MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMNH6042SPSQ Datasheet




 DMNH6042SPSQ
Green DMNH6042SPSQ
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BVDSS
60V
RDS(ON) Max
50m@ VGS = 10V
65m@ VGS = 4.5V
ID Max
TC = +25°C
24A
21A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low Qg Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMNH6042SPSQ-13
Case
PowerDI5060-8
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
NH6042SS
YY WW
= Manufacturer’s Marking
NH6042SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
SS SG
PowerDI is a registered trademark of Diodes Incorporated.
DMNH6042SPSQ
Document number: DS38709 Rev. 1 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMNH6042SPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 8) VGS = 10V
Steady
State
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 8)
Avalanche Current (Note 9) L = 10mH
Avalanche Energy (Note 9) L = 10mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH6042SPSQ
Value
60
±20
24
17
35
24
3.5
65
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.5
98
54
2.9
51
26
3.5
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1.0
Typ
34
45
0.8
584
83
24
3.8
4.2
8.8
1.8
1.8
3.4
1.9
10.1
4.5
12.9
5.4
Max
1
±100
3.0
50
65
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 5.1A
VGS = 4.5V, ID = 4.4A
V VGS = 0V, IS = 2.6A
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 44V, ID = 5.2A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 6Ω, ID = 1A
ns
ns IF = 2.6A, di/dt = 100A/μs
nC IF = 2.6A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMNH6042SPSQ
Document number: DS38709 Rev. 1 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMNH6042SPSQ
30.0
25.0
VGS = 8.0V
VGS = 5.0V
30
VDS = 5V
25
DMNH6042SPSQ
20.0
VGS = 10V
VGS = 4.5V
20
15.0 15
10.0
VGS = 4.0V
5.0
0.0
0
0.08
VGS = 3.3V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
10
5
0
1
0.1
TJ = 175oC
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
2345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
0.07
0.06
0.05
0.04
0.03
0.02
0.01
VGS = 4.5V
VGS = 10V
0.09
0.08
ID = 5.1A
0.07
0.06
0.05
0.04
0.03
0.02
ID = 4.4A
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.08
0.07
VGS = 10V
TJ = 175oC
0.06
0.05
0.04
TJ = 125oC
TJ = 150oC
TJ = 85oC
0.01
2
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
2.4
2.2
2 VGS = 10V, ID = 5.1A
1.8
1.6
1.4
1.2
0.03
TJ = 25oC
0.02
0.01
TJ = -55oC
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
1 VGS = 4.5V, ID = 4.4A
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
PowerDI is a registered trademark of Diodes Incorporated.
DMNH6042SPSQ
Document number: DS38709 Rev. 1 - 2
3 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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