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N-CHANNEL MOSFET. DMTH4004SCTB Datasheet

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N-CHANNEL MOSFET. DMTH4004SCTB Datasheet






DMTH4004SCTB MOSFET. Datasheet pdf. Equivalent




DMTH4004SCTB MOSFET. Datasheet pdf. Equivalent





Part

DMTH4004SCTB

Description

N-CHANNEL MOSFET



Feature


NEW PRODUCT Green DMTH4004SCTB 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET P roduct Summary BVDSS 40V RDS(ON) max 3mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance , making it ideal for high efficiency p ower management applic.
Manufacture

Diodes

Datasheet
Download DMTH4004SCTB Datasheet


Diodes DMTH4004SCTB

DMTH4004SCTB; ations. Engine Management Systems Body Control Electronics DC-DC Converters Features Rated to +175C – Ideal for High Ambient Temperature Environmen ts 100% Unclamped Inductive Switching – Ensures More Reliable and Robust En d Application Low RDS(ON) – Minimize s Power Losses Low Qg – Minimizes Sw itching Losses Lead-Free Finish; RoHS compliant (Notes 1 & 2) Hal.


Diodes DMTH4004SCTB

ogen and Antimony Free. “Green” Devi ce (Note 3) Qualified to AEC-Q101 Stan dards for High Reliability An Automoti ve-Compliant Part is Available Under Se parate Datasheet (DMTH4004SCTBQ) Mechan ical Data Cas .


Diodes DMTH4004SCTB

.

Part

DMTH4004SCTB

Description

N-CHANNEL MOSFET



Feature


NEW PRODUCT Green DMTH4004SCTB 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET P roduct Summary BVDSS 40V RDS(ON) max 3mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance , making it ideal for high efficiency p ower management applic.
Manufacture

Diodes

Datasheet
Download DMTH4004SCTB Datasheet




 DMTH4004SCTB
Green DMTH4004SCTB
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
40V
RDS(ON) max
3mΩ @ VGS = 10V
ID
TC = +25°C
(Note 9)
100A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features
Rated to +175C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low Qg Minimizes Switching Losses
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH4004SCTBQ)
Mechanical Data
Case: TO263AB
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 1.4 grams (Approximate)
TO263AB
D
Top View
D
GS
Pin Out Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMTH4004SCTB-13
Case
TO263AB
Packaging
800 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T4004SCTB
YYWW
T4004SCTB = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 14 = 2014)
WW = Week (01 to 53)
DMTH4004SCTB
Document number: DS37328 Rev. 3 - 2
1 of 6
www.diodes.com
November 2015
© Diodes Incorporated




 DMTH4004SCTB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.2mH
Avalanche Energy, L=0.2mH
TC = +25°C
(Note 9)
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMTH4004SCTB
Value
40
20
100
100
100
200
45
200
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
4.7
32
136
1.1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
2
Typ
2.5
4305
1441
102
0.77
68.6
16.8
14.2
9.5
6.7
26.4
8.1
52.4
78.2
Max
1
±100
4
3
1.3
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 32V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 100A
V VGS = 0V, IS = 100A
pF
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 20V, ID = 90A,
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 90A, RG = 3.5Ω
ns
nC IF = 50A, di/dt = 100A/µs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Device mounted on infinite heatsink and measured by thermal couple attached on bottom heasink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMTH4004SCTB
Document number: DS37328 Rev. 3 - 2
2 of 6
www.diodes.com
November 2015
© Diodes Incorporated




 DMTH4004SCTB
150.0
120.0
VGS=10.0V
90.0
VGS=6.0V
VGS=5.0V
60.0
VGS=4.5V
30.0
0.0
0
VGS=4.0V
VGS=3.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
DMTH4004SCTB
30
VDS= 5.0V
25
20
15
175
150
125
10
85
5 25
-55
0
012345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3.00
2.90
2.80
2.70
2.60
VGS=10.0V
2.50
2.40
2.30
2.20
2.10
2.00
10 30 50 70 90 110 130 150
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
15
12
9
6
ID=100A
3
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.006
0.005
VGS=10V
175
150
2.2
2
1.8
0.004
0.003
0.002
0.001
125
85
25
-55
0
10 30 50 70 90 110 130 150
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
1.6
1.4 VGS=10V, ID=90A
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMTH4004SCTB
Document number: DS37328 Rev. 3 - 2
3 of 6
www.diodes.com
November 2015
© Diodes Incorporated



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