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N-CHANNEL MOSFET. DMTH6009LK3 Datasheet

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N-CHANNEL MOSFET. DMTH6009LK3 Datasheet






DMTH6009LK3 MOSFET. Datasheet pdf. Equivalent




DMTH6009LK3 MOSFET. Datasheet pdf. Equivalent





Part

DMTH6009LK3

Description

N-CHANNEL MOSFET



Feature


ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON Green DMTH6009LK3 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summa ry BVDSS 60V RDS(ON) Max 10mΩ @ VGS = 10V 12.8mΩ @ VGS = 4.5V ID Max TC = +25°C 59A 52A Description and Appl ications This new generation MOSFET is designed to minimize the on-state resis tance (RDS(ON)) and yet maintain superi or switching performance.
Manufacture

Diodes

Datasheet
Download DMTH6009LK3 Datasheet


Diodes DMTH6009LK3

DMTH6009LK3; , making it ideal for high-efficiency po wer management applications. Power Man agement Functions DC-DC Converters Ba cklighting Features Rated to +175C – Ideal for High Ambient Temperature Environments Low RDS(ON) – Ensures on State Losses are Minimized Excellen t Qgd x RDS(ON) Product (FOM) Advanced Technology for DC/DC Converters Small Form Factor Thermally E.


Diodes DMTH6009LK3

fficient Package Enables Higher Density End Products Lead-Free Finish; RoHS Co mpliant (Notes 1 & 2) Halogen and Anti mony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for Hi gh Reliability .


Diodes DMTH6009LK3

.

Part

DMTH6009LK3

Description

N-CHANNEL MOSFET



Feature


ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON Green DMTH6009LK3 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summa ry BVDSS 60V RDS(ON) Max 10mΩ @ VGS = 10V 12.8mΩ @ VGS = 4.5V ID Max TC = +25°C 59A 52A Description and Appl ications This new generation MOSFET is designed to minimize the on-state resis tance (RDS(ON)) and yet maintain superi or switching performance.
Manufacture

Diodes

Datasheet
Download DMTH6009LK3 Datasheet




 DMTH6009LK3
Green DMTH6009LK3
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
10mΩ @ VGS = 10V
12.8mΩ @ VGS = 4.5V
ID Max
TC = +25°C
59A
52A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Power Management Functions
DC-DC Converters
Backlighting
Features
Rated to +175C Ideal for High Ambient Temperature
Environments
Low RDS(ON) Ensures on State Losses are Minimized
Excellent Qgd x RDS(ON) Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH6009LK3Q)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMTH6009LK3-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H6009L
YYWW
DMTH6009LK3
Document number: DS37921 Rev. 3 - 2
=Manufacturers Marking
H6009L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
1 of 7
www.diodes.com
March 2016
© Diodes Incorporated




 DMTH6009LK3
DMTH6009LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
60
±16
14.2
11.9
59
49
80
90
20.3
20.6
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
3.2
47
60
2.5
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
60
-
-
--
-1
- ±100
VGS(TH)
RDS(ON)
VSD
0.7
-
-
-
1.4 2
8.3 10
9.6 12.8
0.9 1.2
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
- 1,925 -
- 438 -
- 41 -
- 1.7 -
- 15.6 -
- 33.5 -
- 4.7 -
- 5.3 -
- 4.5 -
- 8.6 -
- 35.9 -
- 15.7 -
- 18.2 -
- 33.1 -
Unit
V
μA
nA
V
m
m
V
pF
nC
ns
ns
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = 1mA
VDS = 48V, VGS = 0V
VGS = ±16V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 11.5A
VGS = 0V, IS = 20A
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 30V, ID = 13.5A
VDD = 30V, VGS = 10V,
Rg = 6Ω, ID = 13.5A
IF = 13.5A, di/dt = 400A/μs
DMTH6009LK3
Document number: DS37921 Rev. 3 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated




 DMTH6009LK3
30.0
25.0
20.0
15.0
VGS=3.0V
VGS=3.5V
VGS=4.0V
VGS=4.5V
VGS=10.0V
30
VDS=5V
25
20
15
DMTH6009LK3
10.0
5.0
VGS=2.5V
0.0
0
0.01
0.0095
0.009
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS=4.5V
3
10
5
0
1
0.1
125
150
175
85
25
-55
1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
4
0.08
0.0085
0.008
0.0075
0.007
0.0065
VGS=10V
0.06
0.04
0.02
ID=13.5A
0.006
2 6 10 14 18 22 26 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.014
0.013
VGS= 10V
150
175
0.012
0.011
0.01
125
85
0.009
0.008
25
0.007
0.006
-55
0.005
0.004
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
DMTH6009LK3
Document number: DS37921 Rev. 3 - 2
3 of 7
www.diodes.com
0
0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
1.8
1.6
VGS=4.5V, ID=11.5A
1.4
1.2
VGS=10V, ID=13.5A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
March 2016
© Diodes Incorporated



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