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P-Channel MOSFET. ZXMP10A17GQ Datasheet

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P-Channel MOSFET. ZXMP10A17GQ Datasheet






ZXMP10A17GQ MOSFET. Datasheet pdf. Equivalent




ZXMP10A17GQ MOSFET. Datasheet pdf. Equivalent





Part

ZXMP10A17GQ

Description

P-Channel MOSFET



Feature


ZXMP10A17GQ 100V P-CHANNEL ENHANCEMENT M ODE MOSFET Product Summary BVDSS -100 V RDS(ON) max 350mΩ @ VGS = -10V 450m Ω @ VGS = -6V ID TA = +25°C -2.4A -2 .1A Features and Benefits Fast Switch ing Speed Low Input Capacitance Low G ate Drive Totally Lead-Free & Fully Ro HS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Not e 3) Qualified to AEC-Q1.
Manufacture

Diodes

Datasheet
Download ZXMP10A17GQ Datasheet


Diodes ZXMP10A17GQ

ZXMP10A17GQ; 01 Standards for High Reliability PPAP Capable (Note 4) Description and Appli cations This MOSFET has been designed t o minimize the on-state resistance and yet maintain superior switching perform ance, making it ideal for high efficien cy power management applications. Moto r Control DC-DC Converters Power Mana gement Functions Relay and Solenoid Dr iving Mechanical .


Diodes ZXMP10A17GQ

Data Case: SOT223 Case Material: Molde d Plastic, “Green” Molding Compound . UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 p er J-STD-020 Terminals: Finish - Matte Tin Anneale .


Diodes ZXMP10A17GQ

.

Part

ZXMP10A17GQ

Description

P-Channel MOSFET



Feature


ZXMP10A17GQ 100V P-CHANNEL ENHANCEMENT M ODE MOSFET Product Summary BVDSS -100 V RDS(ON) max 350mΩ @ VGS = -10V 450m Ω @ VGS = -6V ID TA = +25°C -2.4A -2 .1A Features and Benefits Fast Switch ing Speed Low Input Capacitance Low G ate Drive Totally Lead-Free & Fully Ro HS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Not e 3) Qualified to AEC-Q1.
Manufacture

Diodes

Datasheet
Download ZXMP10A17GQ Datasheet




 ZXMP10A17GQ
ZXMP10A17GQ
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-100V
RDS(ON) max
350mΩ @ VGS = -10V
450mΩ @ VGS = -6V
ID
TA = +25°C
-2.4A
-2.1A
Features and Benefits
Fast Switching Speed
Low Input Capacitance
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Motor Control
DC-DC Converters
Power Management Functions
Relay and Solenoid Driving
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
D
G
Top View
Pin Out - Top View
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
ZXMP10A17GQTA
ZXMP10A17GQTC
Case
SOT223
SOT223
Packaging
1,000/Tape & Reel
4,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXMP
10A17
ZXMP10A17 = Product Type Marking Code
YWW = Date Code Marking
Y = Year (ex: 7 = 2017)
WW = Week (01 to 53)
ZXMP10A17GQ
Document number: DS37776 Rev. 2 - 2
1 of 6
www.diodes.com
February 2017
© Diodes Incorporated




 ZXMP10A17GQ
ZXMP10A17GQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = -10V
Pulsed Drain Current
VGS = -10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 7)
TA = +70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 6)
Symbol
PD
RJA
RJC
TJ, TSTG
Value
-100
20
-2.4
-1.9
-1.7
-9.4
-4.5
-9.4
Value
2.0
16
3.9
31
62.5
32.0
7.7
-55 to +150
Unit
V
V
A
A
A
A
Unit
W
mW/°C
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Symbol Min
BVDSS
IDSS
IGSS
-100
VGS(TH)
RDS(ON)
gfs
VSD
tRR
QRR
-2.0
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF

Typ Max

-0.5
 100
2.8
-0.85
33
48
-4.0
0.350
0.450
-0.95
424
36.6
29.8
7.1 
10.7
1.7
3.8
3.0
3.5
13.4
7.2
Unit
Test Condition
V ID = -250µA, VGS = 0V
µA VDS = -100V, VGS = 0V
nA VGS = 20V, VDS = 0V
V ID = -250µA, VDS = VGS
VGS = -10V, ID = -1.4A
VGS = -6V, ID = -1.2A
S VDS = -15V, ID = -1.4A
V IS = -1.7A, VGS = 0V
ns
nC IF = -1.5A, di/dt = 100A/µs
pF
pF VDS = -50V, VGS = 0V
f = 1MHz
pF
nC VGS = -6.0V
nC
nC VGS = -10V
VDS = -50V
ID = -1.4A
nC
ns
ns VDD = -15V, VGS = -10V
ns ID = -1A, RG 6.0Ω
ns
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 10 seconds.
8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17GQ
Document number: DS37776 Rev. 2 - 2
2 of 6
www.diodes.com
February 2017
© Diodes Incorporated




 ZXMP10A17GQ
Thermal Characteristics
ZXMP10A17GQ
ZXMP10A17GQ
Document number: DS37776 Rev. 2 - 2
3 of 6
www.diodes.com
February 2017
© Diodes Incorporated



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