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P-Channel MOSFET. DMG3415UFY4Q Datasheet

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P-Channel MOSFET. DMG3415UFY4Q Datasheet






DMG3415UFY4Q MOSFET. Datasheet pdf. Equivalent




DMG3415UFY4Q MOSFET. Datasheet pdf. Equivalent





Part

DMG3415UFY4Q

Description

P-Channel MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMG3415UFY4Q Datasheet


Diodes DMG3415UFY4Q

DMG3415UFY4Q; .


Diodes DMG3415UFY4Q

.


Diodes DMG3415UFY4Q

.

Part

DMG3415UFY4Q

Description

P-Channel MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMG3415UFY4Q Datasheet




 DMG3415UFY4Q
DMG3415UFY4Q
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-16V
RDS(ON) max
39mΩ @ VGS = -4.5V
52mΩ @ VGS = -2.5V
65mΩ @ VGS = -1.8V
ID max
TA = +25°C
-2.5A
-2.1A
-1.8A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: X2-DFN2015-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
ESD PROTECTED TO 3kV
Top View
Bottom View
S
D
G
Internal Schematic
(Top View)
G
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMG3415UFY4Q-7
X2-DFN2015-3
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
34P
YM
34P = Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
~
~
Feb
2
Mar
3
DMG3415UFY4Q
Document number: DS38608 Rev. 1 - 2
2015
C
Apr
4
2016
D
2017
E
May
5
Jun
6
Jul
7
1 of 6
www.diodes.com
2018
F
Aug
8
2019
G
Sep
9
2020
H
Oct Nov
ON
2021
I
Dec
D
January 2016
© Diodes Incorporated




 DMG3415UFY4Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -4.5V
Pulsed Drain Current (Note 7)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
DMG3415UFY4Q
Value
-16
±8
-2.5
-2.2
-12
Unit
V
V
A
A
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady
State
Steady
State
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
TJ = +25C
BVDSS
IDSS
IGSS
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
-16
-0.3
Typ
-0.55
31
40
51
7.9
282
152
38
250
10
1.5
2.4
79
175
885
568
Max
-1.0
±10
±500
-1.0
39
52
65
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
µA VGS = 8V, VDS = 0V
nA VGS = 5V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.0A
mVGS = -2.5V, ID = -3.5A
VGS = -1.8V, ID = -2.0A
S VDS = -5V, ID = -2.5A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V, ID = -4A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RD = 2.5, RG = 3.0
ns
DMG3415UFY4Q
Document number: DS38608 Rev. 1 - 2
2 of 6
www.diodes.com
January 2016
© Diodes Incorporated




 DMG3415UFY4Q
DMG3415UFY4Q
20
16
NT(A)
RE 12
R
U
C
N
RAI 8
D
,
I
D
4
VGS= -4.5V
VGS= -3.5V
VGS= -3.0V
VGS= -2.5V
VGS= -2.0V
VGS= -1.5V
0
0
) 0.08
C(E 0.07
N
TSA
ESI
0.06
R
N-
0.05
O
CE 0.04
R
U
O
N-S
0.03
RAI 0.02
D
, N)
O
RDS(
0.01
0
0
1.6
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
VGS= -2.5V
VGS= -4.5V
4 8 12 16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
5
20
D)
E
CE
R
U
O
N-S
RAI
D
,N
O
RDS
ALZI
M
R
O
N
E(
C
N
SISTA
RE
1.4
1.2
1.0
N-
O
0.8
VGS= -4.5V
ID = -10A
VGS= -2.5V
ID = -5A
0.6
-50 -25
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
20
16
NT(A)
RE 12
R
U
C
N
AI 8
R
D
,
I
D
4
0
0.5
VDS = -5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1 1.5 2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2.5
) 0.08
C(E
N
0.07
RTESISA 0.06
N- 0.05
O
CE
R
0.04
U
O
N-S 0.03
RAI
D
0.02
, N)
O
0.01
S(
RD 0
0
VGS = -4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
4 8 12 16
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
) 0.08
CE( 0.07
N
RESISTA
N-
0.06
0.05
O
CE 0.04
R
U
O
N-S
0.03
RAI 0.02
D
,N
O
S
0.01
RD
0
-50
VGS = -2.5V
ID = -5A
VGS = -4.5V
ID = -10A
-25 0 25 50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG3415UFY4Q
Document number: DS38608 Rev. 1 - 2
3 of 6
www.diodes.com
January 2016
© Diodes Incorporated



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